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US 6,641,675 B2Granted
Method and apparatus for immersion treatment of semiconductor and other devices
AssigneeZ Cap, L.L.C.
InventorsPaul William Dryer, Richard Scott Tirendi, James Bradley Sundin
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Abstract
Method and apparatus for cleaning semiconductor devices and other workpieces using an aqueous rinse solution which is de-oxygenated by passing the aqueous rinse solution and a carrier gas through an osmotic membrane degasifier. A cleaning chamber is also disclosed for carrying out the cleaning method.
Claims47
A method for treating a workpiece with an aqueous solution, comprising:
- providing a carrier fluid comprising at least one component;
- passing said aqueous solution and said carrier fluid through an osmotic membrane degasifier having a membrane, so as to draw oxygen from said carrier fluid and to introduce at least one component of said carrier fluid into said aqueous solution so as to control the pH of said aqueous solution;
- providing a treatment chamber;
- at least partly filling said treatment chamber with said aqueous solution from said osmotic membrane degasifier;
- and
- at least partly immersing said workpiece in said aqueous solution.
3 more elements
A method for cleaning opposed major surfaces of a semiconductor device, comprising:
- providing a cleaning chamber defining a cavity or receiving the semiconductor device;
- inserting the semiconductor device into the cavity;
- filling the cavity with a first solvent so as to immerse said semiconductor device in said first solvent while exciting said chamber with ultrasonic energy so as to transmit said ultrasonic energy through said first solvent to said semiconductor device;
- emptying said cavity of said first solvent;
- filling the cavity with a second solvent so as to immerse said semiconductor device in said second solvent while exciting said chamber with ultrasonic energy so as to transmit said ultrasonic energy through said second solvent to said semiconductor device;
- emptying said cavity of said second solvent;
- providing an aqueous solution;
- providing a carrier fluid containing carbon dioxide
- passing said aqueous solution and said carrier fluid through an osmotic membrane degasifier having a membrane, so as to draw oxygen from said aqueous solution through said membrane to said carrier fluid and so as to introduce carbon dioxide gas through said membrane, into said aqueous solution so as to control the pH of said aqueous solution
- filling the cavity with a aqueous solution from said osmotic membrane degasifier so as to immerse said semiconductor device in said aqueous solution while exciting said chamber with ultrasonic energy so as to transmit said ultrasonic energy through said aqueous solution to said semiconductor device;
- emptying said cavity of said aqueous solution:
- drying the major surfaces of conductor device;
- and
- removing said semiconductor device from said cavity.
11 more elements
Dependencies are inferred from the claim text.