Thermal process apparatus for a semiconductor substrate

A thermal process apparatus for a semiconductor substrate, comprising:

• a heating source heating the semiconductor substrate by irradiating a light on one surface of the semiconductor substrate;
• a reflection plate facing an opposite surface of the semiconductor substrate in a state where a reflection cavity is formed with the opposite surface of the semiconductor substrate;
• a thermometer having a light-receiving part provided in the reflection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source;
• and
• a light absorbing structure provided around the light-receiving part configured to absorb a diffuse reflection light generated in the reflection cavity,
• wherein the light absorbing structure comprises a concave part forming a black body, and
• the concave part is provided at a distance of a natural number multiple of D*tan θ from the light-receiving part,
• where θ is defined as a value of a critical angle of the light receiving part, sin θ is defined as a numerical aperture in a vacuum when the light-receiving part catches the light, and D is defined as a distance between the reflection plate and the semiconductor substrate.

A thermal process apparatus for a semiconductor substrate, comprising:

• a heating source heating the semiconductor substrate by irradiating a light on one surface of the semiconductor substrate;
• a reflection plate facing an opposite surface of the semiconductor substrate in a state where a reflection cavity is formed with the opposite surface of the semiconductor substrate;
• a thermometer having a light-receiving part provided in the reflection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source;
• and
• a light absorbing structure provided around the light-receiving part configured to absorb a diffuse reflection light generated in the reflection cavity,
• wherein the light absorbing structure comprises a concave part forming a black body, and
• the concave part is provided at a distance of r/tan θ under the semiconductor substrate,
• where θ is defined as a value of a critical angle of the light receiving part, sin θ is defined as a numerical aperture in a vacuum when the light-receiving part catches the light and r is defined as a value of a radius of an opening in the light-receiving part.

A thermal process apparatus for a semiconductor substrate, comprising:

• a heating source heating the semiconductor substrate by irradiating a light on one surface of the semiconductor substrate;
• a reflection plate facing to an opposite surface of the semiconductor substrate in a state where a reflection cavity is formed with the opposite surface of the semiconductor substrate;
• a thermometer having a light-receiving part provided in the reflection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source;
• and
• a light absorbing structure provided around the light-receiving part configured to absorb a diffuse reflection light generated in the reflection cavity, wherein
• the light absorbing structure comprises a groove having a designated width and depth, and
• the groove has an opening width whose value is greater than 2D*tan θ,
• where θ is defined as a value of a critical angle of the light receiving part, sin θ is defined as a numerical aperture in a vacuum when the light-receiving part catches the light, and D is defined as a distance between the reflection plate and the semiconductor substrate.

A thermal process apparatus for a semiconductor substrate, comprising:

• a heating source heating the semiconductor substrate by irradiating a light on one surface of the semiconductor substrate;
• a reflection plate facing to an opposite surface of the semiconductor substrate in a state where a reflection cavity is formed with the opposite surface of the semiconductor substrate;
• a thermometer having a light-receiving part provided in the reflection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source;
• and
• a light absorbing structure provided around the light-receiving part configured to absorb a diffuse reflection light generated in the reflection cavity,
• wherein the light absorbing structure comprises a groove having a designated width and depth, and
• the groove is provided at a distance of a natural number multiple of D*tan θ from the light receiving part,
• where θ is defined as a value of a critical angle of the light receiving part, sin θ is defined as the numerical aperture in a vacuum when the light-receiving part catches the light, D is defined as a distance between the reflection plate and the semiconductor substrate.

A thermal process apparatus for a semiconductor substrate comprising:

• a heating source heating the semiconductor substrate by irradiating a light on one surface of the semiconductor substrate;
• a reflection plate facing to an opposite surface of the semiconductor substrate in a state where a reflection cavity is formed with the opposite surface of the semiconductor substrate;
• a thermometer having a light-receiving part provided in the reflection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source;
• and
• a light absorbing structure provided around the light-receiving part configured to absorb a diffuse reflection light generated in the reflection cavity,
• wherein the light absorbing structure comprises a groove having a designated width and depth, and
• the groove is provided at a distance of r/tan θ under the semiconductor substrate,
• where θ is defined as a value of a critical angle of the light receiving part, sin θ is defined as a numerical aperture in a vacuum when the light-receiving part catches the light, and r is defined as a value of a radius of an opening of the light receiving part.