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US 6,640,436 B1Granted
Method of fabricating a coated metallic wire, method of removing insulation from the coated metallic wire and method of fabricating a semiconductor device with the wire
AssigneeNEC Electronics Corporation
InventorsNaoto Kimura, Takahiro Ito
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes removing a predetermined part of an insulative layer of a coated fine metallic wire by irradiating the predetermined part with a laser light and connecting the predetermined part of the fine metallic wire to one of the semiconductor device and a package of the semiconductor device. The insulative layer contains a substance that absorbs the laser light at a predetermined lasing wavelength.
Claims12
A method for fabricating semiconductor device comprising:
- removing a predetermined part of an insulative layer of a coated fine metallic wire, by irradiating said predetermined part of said insulative layer with a laser light, said insulative layer containing a substance absorbing said laser light of a predetermined lasing wavelength;
- and
- connecting said fine metallic wire at said predetermined part to one of said semiconductor device and a package of said semiconductor device.
Dependencies are inferred from the claim text.