Method for forming a dielectric-constant-enchanced capacitor
AssigneeVanguard International Semiconductor Corporation
InventorsWong-Cheng Shih, Lan Lin Chao, Tai-Bor Wu, Chich-Shang Chang
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Abstract
A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.
Claims20
A method for forming a dielectric-constant-enhanced capacitor comprising:
- providing a wafer in a reaction chamber, wherein said wafer comprises a first conductive layer;
- forming a first dielectric layer above said first conductive layer to prevent said first conductive layer form growing silicon oxide and to diminish leakage current;
- transmitting a precursor to a vaporizer;
- transforming said precursor to a gas and transmitting said gas to said reaction chamber;
- depositing a second dielectric layer above said first dielectric layer;
- proceeding a heat treatment;
- and
- forming a second conductive layer on said second dielectric layer.
A method for forming a dielectric-constant-enhanced capacitor comprising:
- providing a wafer in a reaction chamber, wherein said wafer comprises a first conductive layer;
- forming a first dielectric layer above said first conductive layer to prevent said first conductive layer form growing silicon oxide and to diminish leakage current;
- transmitting a precursor to a vaporizer, wherein said precursor comprises a tantalum alkoxy and a titanium ketones;
- transforming said precursor to a gas, mixing said gas, and transmitting said gas to said reaction chamber;
- depositing a second dielectric layer above said first dielectric layer;
- proceeding a heat treatment;
- and
- forming a second conductive layer on said second dielectric layer.
A method for forming a dielectric-constant-enhanced capacitor comprising:
- providing a wafer in a reaction chamber, wherein said wafer comprises a first conductive layer;
- forming a first dielectric layer above said first conductive layer to prevent said first conductive layer form growing silicon oxide and to diminish leakage current;
- transmitting a tantalum alkoxy and a titanium ketones to a vaporizer to be a precursor;
- transforming said tantalum alkoxy and said titanium ketones to a gas state and mixing said tantalum alkoxy and said titanium ketones to become a mixed gas;
- transmitting said mixed gas to said reaction chamber;
- depositing a second dielectric layer above said first dielectric layer by using said mixed gas, wherein a ratio of Ti to Ta is in the range from 5 to 15 mole percent in said second dielectric;
- proceeding a first heat treatment;
- proceeding a second heat treatment;
- and
- forming a second conductive layer on said second dielectric layer.
Dependencies are inferred from the claim text.