Semiconductor light-emitting device
AssigneeMitsubishi Chemical Corporation
InventorsKenji Shimoyama, Satoru Nagao, Katsushi Fujii, Hideki Goto
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Abstract
A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.
Claims25
A semiconductor light-emitting device comprising a substrate having a surface having an off-angle of 0.5° to 30° to a crystallographic plane of (100) or (111), the substrate having thereon:
- compound semiconductor layers including an active layer, formed on said surface having said off-angle;
- a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected;
- a ridge-shaped compound semiconductor layer formed to cover the opening;
- and
- a compound semiconductor contact layer formed to cover the entire surface of a top portion and side surfaces of the ridge-shaped compound semiconductor layer.
A semiconductor light-emitting device comprising a substrate having a surface having an off-angle of 0.5° to 30° to a crystallographic plane of (100) or (111), the substrate having thereon:
- compound semiconductor layers including an active layer, formed on said surface having said off-angle;
- a protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected;
- a ridge-shaped compound semiconductor layer formed to cover the opening, wherein a side wall of the ridge-shaped compound semiconductor layer has a forward mesa shape;
- and
- a compound semiconductor contact layer formed to cover the entire surface of a top portion and side surfaces of the ridge-shaped compound semiconductor layer.
A semiconductor light-emitting device comprising
- a substrate;
- compound semiconductor layers including an active layer formed on the substrate;
- selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected;
- and
- a ridge-shaped compound semiconductor layer formed to cover the opening wherein the ridge is horizontally asymmetric.
A semiconductor light-emitting device comprising
- a substrate;
- compound semiconductor layers including an active layer formed on the substrate;
- a protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a s tripe region to which a current is injected;
- and
- a ridge-shaped compound semiconductor layer formed to cover the opening wherein a side wall of the ridge-shaped compound semiconductor layer has a forward mesa shape and the ridge is horizontally asymmetric.
A semiconductor light-emitting device comprising a substrate having a surface having an off-angle of 0.5° to 30° to a crystallographic plane of (100) or (111), the substrate having thereon:
- compound semiconductor layers including an active layer, formed on said surface having said off-angle;
- a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected;
- and
- a ridge-shaped compound semiconductor layer formed to cover the opening and a portion of a top surface of the protective film.
A semiconductor light-emitting device comprising a substrate having a surface having an off-angle of 0.5° to 30° to a crystallographic plane of (100) or (111), the substrate having thereon:
- compound semiconductor layers including an active layer, formed on said surface having said off-angle;
- a protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected;
- and
- a ridge-shaped compound semiconductor layer formed to cover the opening and a portion of a top surface of the protective film, wherein a side wall of the ridge-shaped compound semiconductor layer has a forward mesa shape.
Dependencies are inferred from the claim text.