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US 6,639,860 B2Granted
Method of screening non-volatile memory devices
AssigneeOki Electric Industry Co., Ltd.
InventorYasuhito Anzai
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Abstract
A method of screening for a non-volatile memory device, including the steps of: controlling the temperature of a memory device at a first level to carry out a first stage of screening; and then, controlling the temperature of a memory device at a second level, which is different from the first level to carry out a second stage of screening.
Claims8
A method of screening a non-volatile memory device, comprising:
- performing a first screening process to detect hopping conduction model defects controlling a temperature of the memory device at a first level;
- and
- performing a second screening process, after said first screening process, to detect Arrhenius model defects by controlling the temperature of the memory device at a second level.
A method of screening out a non-volatile memory device, comprising:
- providing a semiconductor wafer including a plurality of flash memory devices thereon;
- setting and leaving the wafer in a first thermostatic oven controlled in temperature in a range of 85 to 150° C. for a predetermined period of time to carry out a first stage of screening;
- taking out the wafer from the first thermostatic oven;
- setting and leaving the wafer in a second thermostatic oven controlled in temperature at about 250° C. for a predetermined period of time to carry out a second stage of screening;
- taking out the wafer from the second thermostatic oven;
- and cooling down the wafer at a room temperature.
3 more elements
Dependencies are inferred from the claim text.