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US 6,639,842 B1Granted
Method and apparatus for programming non-volatile memory cells
AssigneeSilicon Storage Technology, Inc.
InventorsLoc B. Hoang, Hung Q. Nguyen
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AssigneeSilicon Storage Technology, Inc.
InventorsLoc B. Hoang, Hung Q. Nguyen
Estimating the term…
A method and apparatus are disclosed which counteract coupling effects during programming of non-volatile memory cells in an array of the type which includes bit lines, word lines, and source lines, and temporary storage circuits which can be set to supply a desired state for use in connection with operations involving designated non-volatile memory cells, wherein each of the temporary storage circuits communicates with different groupings of the non-volatile memory cells by way of associated word and source lines. The method and apparatus includes precharging unselected bit lines to a program inhibit level, at a rate which is selected to reduce coupling effects between the unselected bits lines and word lines or source lines, as a part of a programming operation, inhibiting the operation of the temporary storage circuits during a first portion of the precharging step, arranging the temporary storage circuits to be responsive to a minimum number of word lines associated with the selected sector during a period in which unselected bit lines are precharged, setting ones of the temporary storage circuits to desired states following the first portion of the precharging step, and thereafter programming selected non-volatile memory cells.
A method for programming non-volatile memory cells in an array of the type which includes a plurality of bit lines, a plurality of word lines, and a plurality of source lines, and a plurality of temporary storage circuits which can be set to supply a desired state for use in connection with operations involving designated non-volatile memory cells, wherein each of the plurality of temporary storage circuits communicates with a different one of a plurality of groupings of the non-volatile memory cells by way of associated word and source lines, the method comprising the steps of
A method for programming non-volatile memory cells in an array of the type which includes a plurality of bit lines, a plurality of word lines, and a plurality of source lines, and a plurality of temporary storage circuits which can be set to supply a desired state for use in connection with operations involving designated non-volatile memory cells, wherein each of the plurality of temporary storage circuits communicates with a different one of a plurality of groupings of the non-volatile memory cells by way of associated word and source lines, the method comprising the steps of
A method for programming non-volatile memory cells in a selected sector of an array of the type which includes a plurality of bit lines, a plurality of word lines, and a plurality of source lines, and a plurality of temporary storage circuits which can be set to supply a desired state for use in connection with operations involving designated non-volatile memory cells, wherein each of the plurality of temporary storage circuits communicates with a different one of a plurality of groupings of the non-volatile memory cells by way of associated word and source lines, the method comprising the steps of
A method for programming non-volatile memory cells in an array of the type which includes a plurality of bit lines, a plurality of word lines, and a plurality of source lines, and a plurality of temporary storage circuits which can be set to supply a desired state for use in connection with operations involving designated non-volatile memory cells, wherein each of the plurality of temporary storage circuits communicates with a different one of a plurality of groupings of the non-volatile memory cells by way of associated word and source lines, the method comprising the steps of
Dependencies are inferred from the claim text.