Loading patent…
AssigneePowerchip Semiconductor Corp.
InventorsChih-Wei Hung, Chiu-Tsung Huang, Hann-Jye Hsu
Estimating the term…
A method for reading flash memory cell with SONOS structure is disclosed. The flash memory cell with SONOS structure includes a P-well in a substrate, a tunneling oxide layer on the substrate, a charge trapping layer on the tunneling oxide layer, a dielectric layer on the charge trapping layer, a gate conductive layer on the dielectric layer, and source and drain regions in the substrate adjacent to the gate conductive layer. The flash memory cell with SONOS structure is read by applying a positive voltage to the drain region, floating the source region, grounding the P-well to generate gate induced drain leakage current and determining the gate induced drain leakage from the drain region to read the data in the memory cell.
A method for reading a flash memory cell with SONOS structure, wherein the flash memory cell comprises a P-well in a substrate, a tunneling oxide layer on the substrate, a charge trapping layer on the tunneling oxide layer, a dielectric layer on the charge trapping layer, a gate conductive layer on the dielectric layer, and source and drain regions in the substrate adjacent to the gate conductive layer, the method comprising:
Dependencies are inferred from the claim text.