Localized MRAM data line and method of operation

Abstract

A memory array is provided that includes a conductive line adapted to induce a magnetic field around less than all of the magnetic memory junctions arranged along a row or a column of the array. In some cases, the conductive line may be adapted to induce a magnetic field around more than two magnetic memory cell junctions. Alternatively, the conductive line may be adapted to induce a magnetic field around no more than two magnetic memory cell junctions. In either case, the conductive line may include a first portion vertically aligned with one of a plurality of magnetic memory cell junctions and a second portion vertically aligned with another of the plurality of magnetic memory cell junctions. In some embodiments, the second portion may be positioned such that a direction of current flow through the second portion is different than a direction of current flow through the first portion.

Dependencies are inferred from the claim text.