Configuration and method for the low-loss writing of an MRAM

A configuration for the low-loss writing of a magneto-resistive random access memory, comprising:

• a cell field having word lines, bit lines, and memory cells disposed in said cell field between respective ones of said word lines and said bit lines;
• said memory cells being configured to have a voltage drop occur on a selected one of said word lines connected to a particular one of said memory cells when writing into said particular one of said memory cells, said selected word line having two ends;
• and
• when a voltage V1 and a voltage V2<V1 are present at a respective one of said two ends of said selected word line, said cell field being configured to have all of said bit lines set to voltages (V1+V2)/2 and to have a maximum cell voltage of ±(V1−V2)/2.

A configuration for the low-loss writing of a magneto-resistive random access memory, comprising:

• a cell field having word lines, bit lines, and memory cells disposed in said cell field between respective ones of said word lines and said bit lines;
• and
• said bit lines being configured to have a voltage drop occur on selected ones of said bit lines connected to a particular one of said memory cells when writing into said particular one of said memory cells, said selected bit lines each having two ends;
• and
• when a voltage V1 and a voltage V2<V1 are present at a respective one of said two ends of said selected bit lines, said cell field being configured to have all of said word lines set to voltages (V1+V2)/2 and to have a maximum cell voltage of ±(V1−V2)/2.

A method for the low-loss writing of a magneto-resistive random access memory, which comprises:

• providing memory cells in a cell field between respective word lines and bit lines;
• creating a voltage drop on a selected one of the word lines connected to a particular one of the memory cells when writing into the particular memory cell;
• and
• setting voltages at the bit lines to minimize a cell voltage across the memory cells between the selected word line and each individual one of the bit lines.

A configuration for the low-loss writing of a magneto-resistive random access memory, which comprises:

• providing memory cells in a cell field between respective word lines and bit lines;
• creating a voltage drop on a word line connected to a particular one of the memory cells when writing into the particular memory cell;
• and
• setting, when a voltage V1 and a voltage V2<V1 are present at two ends of a selected word line, all bit lines to voltages (V1+V2)/2 such that a maximum cell voltage is ±(V1−V2)/2.

A method for the low-loss writing of a magneto-resistive random access memory, which comprises:

• providing memory cells in a cell field between respective word lines and bit lines;
• creating a voltage drop on selected bit lines connected to a particular one of the memory cells when writing into the particular memory cell;
• and
• setting voltages at the word lines to minimize a cell voltage across the memory cells between the selected bit lines and each individual one of the word lines.

A method for the low-loss writing of a magneto-resistive random access memory, which comprises:

• providing memory cells in a cell field between respective word lines and bit lines;
• creating a voltage drop on selected bit lines connected to a particular one of the memory cells when writing into the particular memory cell;
• and
• setting, when a voltage V1 and a voltage V2<V1 are present at two ends of a selected bit line, all word lines to voltages (V1+V2)/2 such that a maximum cell voltage is ±(V1−V2)/2.