Multi-layer ceramic electrostatic chuck with integrated channel
AssigneeApplied Materials, Inc.
InventorsShamouil Shamouilian, You Wang, Ananda H. Kumar
Life of this patent
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Abstract
A semiconductor wafer support chuck having small diameter gas distribution ports for heat transfer gas. The diameter ports inhibit plasma ignition in heat transfer gas distribution channels. The ports are less than 20 mils in diameter less than 3 mm in length. The short length of the ports facilitates fabrication of multiple ports of very small diameter. The ports communicate with a gas distribution plenum integrated into the body of the chuck beneath a wafer support surface. The plenum has radial channels and a peripheral groove for distributing heat transfer gas to the wafer support surface.
Claims19
Apparatus for supporting a substrate in a processing chamber, comprising:
- a first ceramic layer having a support surface, a bottom surface, and a plurality of ports;
- a second ceramic layer, disposed beneath said first layer, the second layer having a centrally disposed inlet and a plenum extending radially and longitudinally outward from the centrally disposed inlet formed therein, said plurality of ports are in fluid communication with the plenum and both the plurality of ports and plenum sized to inhibit plasma ignition inside the plenum, and
- a third ceramic layer disposed beneath the second ceramic layer having a central bore communicating with said centrally disposed inlet.
A method of fabricating an apparatus for supporting a substrate in a processing chamber, said apparatus having a first ceramic layer, a second ceramic layer having a plenum therein, and a third ceramic layer said method comprising the steps of:
- providing said first ceramic layer having a support surface and a bottom surface;
- forming a plurality of ports in said first ceramic layer;
- providing said second ceramic layer;
- forming a central inlet and a radially extending plenum from said inlet in said second ceramic layer;
- disposing said second ceramic layer beneath said first ceramic layer;
- said ports in fluid communication with said plenum and both the ports and plenum are sized to inhibit plasma ignition inside the plenum providing said third ceramic layer;
- and
- disposing said third ceramic layer beneath said second ceramic layer.
Apparatus for supporting a substrate in a processing chamber, comprising:
- a first ceramic layer having a support surface, a bottom surface, and a plurality of ports, wherein said first ceramic layer is less than approximately 3 mm thick;
- a second ceramic layer, disposed beneath said first ceramic layer, having a plenum formed therein, wherein said plenum comprises a plurality of radially extending channels that communicate with a peripheral groove wherein said bottom surface forms a roof of said plenum and said plurality of ports communicate through said first layer between said support surface and said bottom surface with said plenum, said ports and plenum being sized to inhibit plasma ignition inside the plenum;
- and
- a third ceramic layer disposed beneath said second layer, said third layer having at least one electrode.
Dependencies are inferred from the claim text.