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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHideaki Adachi, Masayoshi Hiramoto, Kenji Iijima, Hiroshi Sakakima
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A magnetoresistive element with an improved magnetoresistive effect achieved by interposing a titanium nitride layer between a substrate and a spinel-type magnetic substance is provided. The magnetoresistive element comprises a substrate and a multilayer film formed on the substrate, and the multilayer film includes a first magnetic layer, a nonmagnetic layer formed on the first magnetic layer and a second magnetic layer formed on this nonmagnetic layer. An electric current is supplied in a direction perpendicular to a film surface of the multilayer film, and a change in electrical resistance is detected by the electric current based on a change in a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer. The first magnetic layer has a spinel crystal structure, and the multilayer film further includes a titanium nitride layer interposed between the substrate and the first magnetic layer.
A magnetoresistive element comprising a substrate and a multilayer film formed on the substrate, the multilayer film including a first magnetic layer, a nonmagnetic layer formed on the first magnetic layer and a second magnetic layer formed on the nonmagnetic layer, the layers being laminated from a side of the substrate in this order, an electric current being supplied in a direction perpendicular to a film surface of the multilayer film, and a change in electrical resistance being detected by the electric current based on a change in a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer,
Dependencies are inferred from the claim text.