MEMS RF switch with low actuation voltage

A method for fabricating a MEMS RF switch apparatus operable under a low actuation voltage, the method comprising:

• selecting a substrate;
• fixing a first electrode to the substrate;
• fixing a first layer of dielectric material having a dielectric constant above 10 on the first electrode;
• attaching a second electrode to a flexible support element positioned above the first electrode creating a first space having a height (d) between the first electrode and the second electrode;
• and
• attaching a third electrode to a non-flexible support element positioned above the second electrode creating a space having a height no greater than (2d) between the third electrode and the flexible support element;
• the third electrode attached above the second electrode to create a second space having a height between 500 and 10000 Angstroms between the second and third electrodes;
• wherein the flexible support element suspends the second electrode when the switch is in an open position and pulls the second electrode to the layer of dielectric material when the switch is in a closed position in response to a voltage between the first and second electrodes.

A MEMS (micro-electromechanical) RF switch apparatus operable under low actuation voltage, the apparatus comprising:

• a substrate;
• a first electrode attached to the substrate;
• a first layer of dielectric material having a dielectric constant above 10 on the first electrode;
• a second electrode positioned above the first electrode creating a first space having a height less than 5000 Angstroms between the first layer of dielectric and the second electrode;
• a support element for suspending the second electrode when the switch is in an open position and for moving the second electrode when the second electrode is pulled to the layer of dielectric material when the switch is in a closed position in response to a voltage between the first and second electrodes;
• and
• a third electrode positioned above the second electrode creating a second space having a height between 500 and 10000 Angstroms between the second and third electrodes.

A MEMS (micro-electromechanical) RF switch apparatus operable under low actuation voltage, the apparatus comprising:

• a substrate;
• a first electrode attached to the substrate;
• a first layer of dielectric material having a dielectric constant above 10 on the first electrode;
• a second electrode positioned above the first electrode creating a first space having a height less than 5000 Angstroms between the first layer of dielectric and the second electrode;
• and
• a support element for suspending the second electrode when the switch is in an open position and for moving the second electrode when the second electrode is pulled to the layer of dielectric material when the switch is in a closed position in response to a voltage between the first and second electrodes, wherein the support element comprises at least one beam having one end attached to the second electrode, and a second end attached to the substrate.