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US 6,639,450 B2Granted
Enhanced conductivity body biased PMOS driver
AssigneeIntel Corporation
InventorSanjay Dabral
Life of this patent
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Abstract
According to one embodiment of the present invention a method for biasing a body of a transistor. The method includes detecting a voltage applied to a terminal of a transistor and coupling a biasing voltage to the body based upon the detected voltage.
Claims10
A semiconductor circuit, comprising:
- a power supply node that is to provide a supply voltage;
- a first current source;
- at least one field effect transistor having a source, a body coupled to the first current source;
- and the source coupled to the power supply node, wherein the at least one field effect transistor is at least one p-channel field effect transistor (PFET transistor) and the body is an n-type body, wherein the first current source is a current mirror having a first transistor and a second transistor.
1 more element
Dependencies are inferred from the claim text.