Semiconductor member, semiconductor device and manufacturing methods thereof
AssigneeCanon Kabushiki Kaisha
InventorsKazutaka Momoi, Takao Yonehara, Nobuhiko Sato, Masataka Ito, Noriaki Honma
Life of this patent
Estimating the term…
Abstract
In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing the microgaps between two substrates.
Claims15
A semiconductor member comprising:
- a substrate;
- an insulating layer formed on said substrate;
- and
- a semiconductor layer formed on said insulating layer,
- wherein said semiconductor member includes a monolayer region having plural microgaps for gettering metal impurities, said plural microgaps being arranged along an interface inside said semiconductor member, and
- wherein a concentration of Ni captured in said monolayer region is equal to or less than 5×1010 per square centimeter.
A semiconductor member comprising:
- a substrate;
- an insulating layer formed on said substrate;
- and
- a semiconductor layer formed on said insulating layer,
- wherein said semiconductor member includes a monolayer region having plural microgaps for gettering metal impurities, said plural microgaps being arranged along an interface inside said semiconductor member, and
- wherein said microgaps are box-shaped having a lengthwise side 10 nm to 100 nm long and a widthwise side 10 nm to 100 nm long in a plane substantially in parallel with said interface or are not box-shaped but have an area equivalent to that of a box having a lengthwise side 10 nm to 100 nm long and a widthwise side 10 nm to 100 nm long.
A semiconductor member comprising:
- a substrate,
- an insulating layer formed on said substrate;
- and
- a semiconductor layer formed on said insulating layer,
- wherein said semiconductor member includes a monolayer region having plural microgaps for gettering metal impurities, said plural microgaps being arranged along an interface inside said semiconductor member, and
- wherein a density of said microgaps in a plane along said interface is from 5×109 per square centimeter to 5×1011 per square centimeter.
A semiconductor member comprising:
- a substrate;
- an insulating layer formed on said substrate;
- and
- a semiconductor layer formed on said insulating layer,
- wherein plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm are dispersed and arranged at a density from 5×109 per square centimeter to 5×1011 per square centimeter along a plane substantially in parallel with a surface of said semiconductor member.
A method for manufacturing a semiconductor member, said semiconductor member comprising a substrate, an insulating layer formed on said substrate, and a semiconductor layer formed on said insulating layer, and said semiconductor member including plural microgaps, said microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm and being dispersed and arranged at a density from 5×109 per square centimeter to 5×1011 per square centimeter along a plane substantially in parallel with a surface of said semiconductor member, said method comprising the steps of:
- preparing a first substrate and a second substrate, said first substrate including a transfer layer region having said semiconductor layer;
- and
- transferring said transfer layer region from said first substrate to said second substrate,
- wherein said transferring step includes a step of bonding said first substrate with said second substrate so as to interpose said plural microgaps for gettering metal impurities between said first substrate and said second substrate.
A semiconductor device comprising:
- a semiconductor member, said semiconductor member including a substrate, a buried insulating layer formed on said substrate, and a single-crystal semiconductor layer formed on said buried insulating layer;
- and
- a semiconductor element being formed on said single-crystal semiconductor layer of said semiconductor member,
- wherein plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm are dispersed and arranged at a density from 5×109 per square centimeter to 5×1011 per square centimeter along at least one interface of said buried insulating layer.
A method for manufacturing a semiconductor device, said semiconductor device comprising a semiconductor member and a semiconductor element, said semiconductor member comprising a substrate, a buried insulating layer formed on said substrate, and a single-crystal semiconductor layer formed on said buried insulating layer, and said semiconductor element being formed on said single-crystal semiconductor layer of said semiconductor member, said method comprising the step of:
- performing a heat treatment at least during or after a step of forming said semiconductor element, to thereby capture metal impurities by plural microgaps, said plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm and being dispersed and arranged at a density from 5×109 per square centimeter to 5×1011 per square centimeter along at least one interface of said buried insulating layer.
A semiconductor member comprising plural microgaps, said plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm and being dispersed and arranged at a density from 5×109 per square centimeter to 5×1011 per square centimeter along a plane substantially in parallel with a surface of said semiconductor member.
A method for manufacturing a semiconductor member, said semiconductor member comprising plural microgaps, said plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm and being dispersed and arranged at a density from 5×109 per square centimeter to 5×1011 per square centimeter along a plane substantially in parallel with a surface of said semiconductor member, said method comprising the steps of:
- preparing a first substrate and a second substrate, said first substrate including a transfer layer region having a semiconductor layer;
- and
- transferring said transfer layer region from said first substrate to said second substrate,
- wherein said transferring step includes a step of bonding said first substrate with said second substrate so as to interpose said plural microgaps between said first substrate and said second substrate.
A semiconductor device comprising:
- a semiconductor member including a single-crystal semiconductor layer;
- and
- a semiconductor element formed in said single-crystal semiconductor layer of said semiconductor member,
- wherein plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm are dispersed and arranged along at least one interface at a density from 5×109 per square centimeter to 5×1011 per square centimeter.
A method for manufacturing a semiconductor device, said semiconductor device comprising a semiconductor member including a single-crystal semiconductor layer;
- and a semiconductor element formed in said single-crystal semiconductor layer of said semiconductor member, said method comprising the step of:
- performing a heat treatment at least during or after a step of forming said semiconductor element, to thereby capture metal impurities by plural microgaps, said plural microgaps having a length from 10 nm to 100 nm and a width from 10 nm to 100 nm and being dispersed and arranged along at least one interface at a density from 5×109 per square centimeter to 5×1011 per square centimeter.
A method for manufacturing a semiconductor member, said semiconductor member comprising a substrate, an insulating layer formed on said substrate, and a semiconductor layer formed on said insulating layer, and said semiconductor member including a monolayer region having plural microgaps, said plural microgaps being arranged along an interface inside said semiconductor member, said method comprising the steps of:
- preparing a first substrate and a second substrate, said first substrate including a transfer layer region having said semiconductor layer;
- and
- transferring said transfer layer region from said first substrate to said second substrate,
- wherein said transferring step includes a step of bonding said first substrate with said second substrate so as to interpose said plural microgaps for gettering a metal impurity between said first substrate and said second substrate, and
- wherein a concentration of Ni captured in said monolayer region is equal to or less than 5×1010 per square centimeter.
A method for manufacturing a semiconductor member, said semiconductor member comprising a substrate, an insulating layer formed on said substrate, and a semiconductor layer formed on said insulating layer, and said semiconductor member including a monolayer region having plural microgaps, said plural microgaps being arranged along an interface inside said semiconductor member, said method comprising the steps of:
- preparing a first substrate and a second substrate, said first substrate including a transfer layer region having said semiconductor layer;
- and
- transferring said transfer layer region from said first substrate to said second substrate,
- wherein said transferring step includes a step of bonding said first substrate with said second substrate so as to interpose said plural microgaps for gettering a metal impurity between said first substrate and said second substrate, and
- wherein said microgaps are box-shaped having a lengthwise side 10 nm to 100 nm long and a widthwise side 10 nm to 100 nm long in a plane substantially in parallel with said interface or are not box-shaped but have an area equivalent to that of a box having a lengthwise side 10 nm to 100 nm long and a widthwise side 10 nm to 100 nm long.
A method for manufacturing a semiconductor member, said semiconductor member comprising a substrate, an insulating layer formed on said substrate, and a semiconductor layer formed on said insulating layer, and said semiconductor member including a monolayer region having plural microgaps, said plural microgaps being arranged along an interface inside said semiconductor member, said method comprising the steps of:
- preparing a first substrate and a second substrate, said first substrate including a transfer layer region having said semiconductor layer;
- and
- transferring said transfer layer region from said first substrate to said second substrate,
- wherein said transferring step includes a step of bonding said first substrate with said second substrate so as to interpose said plural microgaps for gettering a metal impurity between said first substrate and said second substrate, and
- wherein a density of said microgaps in a plane along said interface is from 5×109 per square centimeter to 5×1011 per square centimeter.
Dependencies are inferred from the claim text.