Electrode having substrate and surface electrode components for a semiconductor device
AssigneeFurukawa Electric Co., Ltd.
InventorsKoichi Toyosaki, Akifumi Nakajima, Naoki Tsukiji
Life of this patent
Estimating the term…
Abstract
An electrode for a semiconductor device superior in die-bonding and wire-bonding characteristics with a submount and its manufacturing method are provided. The electrode is formed by ohmic-contacting the surface of a semiconductor, which comprises a substrate electrode E1 having a layer structure formed on the surface of the semiconductor and a surface electrode E2 formed by covering the surface and/or side face of the substrate electrode E1. The surface electrode is manufactured by a vacuum evaporation system or sputtering system provided with a holder which is tilted with respect to a material of the surface electrode and able to rotate on its axis and orbit the material.
Claims17
An electrode for a semiconductor device comprising:
- a) a substrate electrode formed on a surface of a semiconductor by ohmic-contacting the surface of the semiconductor, said substrate electrode having a layer structure;
- and
- b) a surface electrode formed to cover a top surface and all side faces of said substrate electrode, wherein
- said substrate electrode has a layer structure obtained by laminating a layer made of at least one selected from the group consisting of Mo, Cr, and W;
- and a layer made of at least one selected from the group consisting of Pt and Pd;
- in this order, said surface electrode having a lowest layer made of at least one selected from the group consisting of Mo, Cr, and W;
- said lowest layer covering the top surface and all the side faces of said substrate electrode.
An electrode for a semiconductor device comprising:
- a) a substrate electrode formed on a surface of a semiconductor by ohmic-contacting the surface of the semiconductor, said substrate electrode having a layer structure;
- and
- b) a surface electrode formed to cover a top surface and all side faces of said substrate electrode, wherein
- said substrate electrode has a layer structure obtained by laminating a layer made of AuGeNi;
- a first layer made of at least one selected from the group consisting of Mo, Cr, and W;
- and a layer made of at least one selected from the group consisting of Pt and Pd;
- in this order;
- and
- said surface electrode having a layer structure obtained by laminating a second layer made of at least one selected from the group consisting of Mo, Cr, and W and an Au layer in this order.
An electrode for a semiconductor device comprising:
- a) a substrate electrode formed on a surface of a semiconductor by ohmic-contacting the surface of the semiconductor, said substrate electrode having a layer structure;
- and
- b) a surface electrode formed to cover a top surface and all side faces of said substrate electrode, wherein
- said substrate electrode has a layer structure obtained by laminating an AuGeNi layer, a first Mo layer and a Pt layer in this order;
- and
- said surface electrode having a layer structure obtained by laminating a second Mo layer and an Au layer in this order.
An electrode for a semiconductor device comprising:
- a) a substrate electrode formed on a surface of a semiconductor by ohmic-contacting the surface of the semiconductor, said substrate electrode having a layer structure;
- and
- b) a surface electrode formed to cover a top surface and all side faces of said substrate electrode, wherein
- said substrate electrode has a layer structure obtained by laminating an AuGe layer;
- an Ni layer;
- a first layer made of at least one selected from a group consisting of Mo, Cr, and W;
- and a layer made of at least one selected from the group consisting of Pt and Pd;
- in this order, and
- said surface electrode having a layer structure obtained by laminating a second layer made of at least one selected from the group consisting of Mo, Cr, and W;
- and an Au layer, in this order.
An electrode for a semiconductor device comprising:
- a) a substrate electrode formed on a surface of a semiconductor by ohmic-contacting the surface of the semiconductor, said substrate electrode having a layer structure;
- and
- b) a surface electrode formed to cover a top surface and all side faces of said substrate electrode, wherein said substrate electrode has a layer structure obtained by laminating an AuGe layer, an Ni layer, a first Mo layer, and a Pt layer in this order, said surface electrode having a layer structure obtained by laminating a second Mo layer and an Au layer in this order.
An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising:
- a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W;
- a layer made of at least one selected from the group consisting of Pt and Pd;
- and a second layer made of at least one selected from the group consisting of Mo, Cr and W;
- in this order, wherein said layer structure comprises
- a first layer structure obtained by laminating an AuGeNi layer;
- the first layer made of at least one selected from the group consisting of Mo, Cr and W;
- and the layer made of at least one selected from the group consisting of Pt and Pd;
- in this order;
- and
- a second layer structure obtained by laminating the second layer made of at least one selected from the group consisting of Mo, Cr and W and an Au layer, in this order.
An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising:
- a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W;
- a layer made of at least one selected from the group consisting of Pt and Pd;
- and a second layer made of at least one selected from the group consisting of Mo, Cr and W;
- in this order, wherein said layer structure comprises
- a first layer structure obtained by laminating an AuGeNi layer, a first Mo layer, and a Pt layer in this order, and
- a second layer structure obtained by laminating a second Mo layer and an Au layer in this order.
An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising:
- a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W;
- a layer made of at least one selected from the group consisting of Pt and Pd;
- and a second layer made of at least one selected from the group consisting of Mo, Cr and W;
- in this order, wherein said layer structure comprises
- a first layer structure obtained by laminating an AuGe layer, an Ni layer, the first layer made of at least one selected from the group consisting of Mo, Cr and W;
- and the layer made of at least one selected from the group consisting of Pt and Pd in this order;
- and a second layer structure obtained by laminating the second layer of at least one selected from a group consisting of Mo, Cr and W;
- and an Au layer in this order.
An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising:
- a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W;
- a layer made of at least one selected from the group consisting of Pt and Pd;
- and a second layer made of at least one selected from the group consisting of Mo, Cr and W;
- in this order, wherein said layer structure comprises
- a first layer structure obtained by laminating an AuGe layer, an Ni layer, a first Mo layer, and a Pt layer in this order;
- and
- a second layer structure obtained by laminating a second Mo layer and an Au layer in this order.
Dependencies are inferred from the claim text.