Semiconductor device with a particular conductor arrangement
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTatsuya Kunikiyo
Life of this patent
Estimating the term…
Abstract
A tungsten nitride (6b) is provided also on side surface of a tungsten (6c), to increase an area where the tungsten (6c) and the tungsten nitride (6b) are in contact with each other. On a gate insulating film (2), a polysilicon side wall (5) having high adhesive strength to the gate insulating film is disposed. The polysilicon side wall (5) is brought into a close contact with the tungsten nitride (6b) on the side surface of the tungsten (6c). With this structure improved is adhesive strength of a metal wire or a metal electrode which is formed on an insulating film of a semiconductor device.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having an insulating film directly on one major surface thereof where constituent elements of a semiconductor device are incorporated;
- a first conductor formed in direct contact with an upper surface of said insulating film;
- a barrier layer formed having a first portion that extends over and in parallel with the upper surface of said insulating film and a second portion in direct contact with side surfaces of said first conductor;
- and
- a second conductor formed in direct contact with a surface of said barrier layer,
- wherein said first conductor and said second conductor are included as part of a wiring or a gate electrode of an MOS type transistor, and
- wherein the insulating film is a gate insulating layer or an isolation structure.
A semiconductor device, comprising:
- a semiconductor substrate having an insulating film in direct contact with one major surface thereof where constituent elements of a semiconductor device are incorporated;
- a first conductor formed in direct contact with an upper surface of said insulating film;
- and
- a second conductor having a first portion that extends over and in parallel with the upper surface of said insulating film and a second portion that is not insulated from any part of side surfaces of said first conductor and extends over said side surfaces of said first conductor that contact the insulating film,
- wherein said first conductor and said second conductor are included as part of a wiring or as part of a gate electrode of an MOS type transistor, and
- wherein the insulating film is a gate insulating layer or an isolation structure.
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating film in direct contact with said semiconductor substrate;
- a first conductor in direct contact with a first portion of an upper surface of the insulating film;
- a barrier layer configured to stop diffusion of a particular material there through, said barrier layer extending in direct contact with a second portion of the upper surface of the insulating film that extends in a same direction as said first portion of the upper surface of the insulating film and side surfaces of said first conductor;
- and
- a second conductor including the particular material, said second conductor having a portion in contact with a top surface of said barrier layer,
- wherein the insulating film is a gate insulating layer or an isolation structure.
Dependencies are inferred from the claim text.