Method for fabricating a semiconductor device
AssigneeAgere Systems Inc.
InventorsJonathon Marlon Lobbins, Lauri Monica Nelson, Danica Deshone Smith, Dominique A. Wesby
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Abstract
A method for making a semiconductor device is provided. The method allows for depositing a layer of a doped dielectric. The method further allows for executing plasma etching so that one or more etchant gases flow over the layer of doped dielectric. A redepositing step allows for redepositing another layer of doped dielectric over the plasma etched layer. The present invention enables to remove crystal defects that may be present in the doped dielectric surface and improve surface planarity.
Claims17
A semiconductor device comprising:
- a first layer of doped dielectric wherein said first layer is processed using a plasma etch to form a substantially planar plasma-etched layer before any other layer is deposited on the first layer;
- and
- a second layer of doped dielectric deposited over the plasma etched layer.
A semiconductor device comprising:
- a first layer of a doped dielectric wherein said first layer is processed using plasma etch to form a plasma-etched layer;
- and
- a second layer of doped dielectric deposited over the plasma-etched layer wherein an interface boundary between said first and second layers comprises a respective indentation.
A semiconductor device comprising:
- a first layer comprising Boro Phosphor Silicate Glass having an upper surface processed to form a substantially planar surface before any other layer is deposited on the first layer;
- and
- a second layer of Boro Phosphor Silicate Glass deposited directly on the upper surface of the first layer.
A semiconductor device comprising:
- a first layer comprising Boro Phosphor Silicate Glass having an upper surface processed to form a substantially planar surface before any other layer is deposited on the first layer;
- and
- a second layer of Boro Phosphor Silicate Glass deposited directly on the first layer.
Dependencies are inferred from the claim text.