Semiconductor transistor having interface layer between semiconductor and insulating layers
AssigneeLG. Philips LCD Co., Ltd.
InventorChae Gee Sung
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Abstract
The present invention provides a semiconductor device capable of preventing deterioration in carrier mobility of a semiconductor layer, which is a quality of the interface between the semiconductor layer and an insulating layer, and a method of manufacturing the semiconductor device. In the semiconductor device, an interface layer is provided between a semiconductor layer made of active polycrystalline silicon and an insulating layer made of silicon oxide. The nitrogen element in silicon nitride diffuses into the semiconductor layer made of active polycrystalline silicon to compensate for lattice strain of the active polycrystalline silicon film, to satisfy the desired quality of the interface between the semiconductor layer and the insulating layer.
Claims20
A semiconductor device comprising:
- a substrate;
- a patterned semiconductor layer made of active polycrystalline silicon formed on the substrate;
- a gate insulating layer made of silicon oxide;
- an interface layer made of silicon nitride and provided between the patterned semiconductor layer and the gate insulating layer so that nitrogen from the interface layer is diffused into the patterned semiconductor layer;
- and
- a gate electrode disposed on the gate insulating layer.
A semiconductor device comprising:
- a substrate;
- a patterned semiconductor layer made of active polycrystalline silicon formed on the substrate;
- an interface layer made of silicon nitride and formed on a surface of the patterned semiconductor layer so that nitrogen from the interface layer is diffused into the patterned semiconductor layer;
- gate insulating layer on the interface layer and the substrate;
- and
- a gate electrode disposed on the gate insulating layer.
A semiconductor device comprising:
- a substrate;
- a patterned semiconductor layer made of active polycrystalline silicon formed on the substrate;
- a gate insulating layer made of silicon oxide;
- an interface layer made of silicon nitride and provided between the patterned semiconductor layer and the gate insulating layer, the patterned semiconductor layer containing nitrogen from the interface layer;
- and
- a gate electrode disposed on the gate insulating layer.
Dependencies are inferred from the claim text.