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US 6,639,277 B2Granted
High-voltage transistor with multi-layer conduction region
AssigneePower Integrations, Inc.
InventorsValdimir Rumennik, Donald R. Disney, Janardhanan S. Ajit
Life of this patent
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Abstract
A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched therein. The one or more buried layers create an associated plurality of parallel JFET conduction channels in the extended portion of the well region. The parallel JFET conduction channels provide the HVFET with a low on-state resistance.
Claims19
A high voltage field-effect transistor (HVFET) comprising:
- a substrate of a first conductivity type;
- a first region of a second conductivity type;
- a source diffusion region of the second conductivity type disposed in the substrate spaced-apart from the first region to form an IGFET channel region therebetween;
- a drain diffusion region disposed in the first region;
- a first plurality of vertically spaced-apart buried layers of the first conductivity type disposed within the first region and spaced-apart from the drain diffusion region, the buried layers extending continuously across a portion of the first region to form an associated plurality of JFET channels in the first region, each of the buried layers having a length and a width the length being substantially greater than the width;
- an insulating layer disposed over the substrate;
- and
- a gate overlying an area of the insulating layer above the IGFET channel region.
5 more elements
A high voltage field-effect transistor (HVFET) comprising:
- a substrate of a first conductivity type;
- a first region of a second conductivity type;
- a source diffusion region of the second conductivity type disposed in the substrate spaced-apart from the first region to form an IGFET channel region therebetween;
- a drain diffusion region disposed in the first region;
- a first plurality of buried layers of the first conductivity type disposed within the first region spaced-apart from the drain diffusion region, the first plurality of buried layers forming an associated plurality of JFET channels in the first region;
- a second plurality of buried layers of the first conductivity type disposed beneath the source diffusion region;
- an insulating layer disposed over the substrate;
- and
- a gate overlying an area of the insulating layer above the IGFET channel region.
6 more elements
A high voltage field-effect transistor (HVFET) comprising:
- a substrate of a first conductivity type;
- a first region of a second conductivity type disposed within the substrate;
- a source diffusion region of the second conductivity type disposed in the substrate spaced-apart from the first region, a channel region being formed in the substrate between the source diffusion region and the first region:
- a source electrode connected to the source diffusion region;
- a drain diffusion region of the second conductivity type disposed within the first region;
- a drain electrode connected to the drain diffusion region;
- a plurality of vertically spaced-apart buried regions of the first conductivity type disposed within the first region, all but one of the buried regions not being in contact with a too surface of the substrate, the buried regions each being spaced-apart from the drain diffusion region and extending continuously across a portion of the first region to form a corresponding plurality of conduction channels, each of the buried regions having a length and a width, the length being substantially greater than the width;
- and
- an insulated gate formed over the channel region.
6 more elements
A high voltage field-effect transistor (HVFET) comprising:
- a substrate of a first conductivity type;
- a first region of a second conductivity type;
- a source region of the second conductivity type separated from the first region;
- a drain region disposed in the first region;
- a plurality of buried layers of the first conductivity type disposed within the first region and vertically separated from each other, the plurality of buried layers extending continuously across a portion of the first region to form an associated plurality of conduction channels in the first region, each of the buried layers having a length and a width, the length being substantially greater than the width;
- and
- an insulated gate extending from the source region to the first region.
4 more elements
A high voltage field-effect transistor (HVFET) comprising:
- a substrate of a first conductivity type;
- a first region of a second conductivity type;
- a source region of the second conductivity type separated from the first region;
- a drain region disposed in the first region;
- a plurality of buried layers of the first conductivity type disposed within the first region and vertically separated from each other, each of the buried layers extending continuously across a portion of the first region, each of the buried layers having a length and a width, the length being substantially greater than the width;
- and
- an insulated extending from the source region to the first region.
4 more elements
Dependencies are inferred from the claim text.