Power MOSFET with ultra-deep base and reduced on resistance

A power semiconductor device comprising:

• a substrate of a first conductivity type;
• an epitaxial layer of a first conductivity type formed on a surface of said substrate;
• a plurality of lightly doped based regions of a second conductivity type formed to a first predetermined depth in said epitaxial layer, said base regions being spaced from one another;
• common conduction regions disposed between said base regions;
• a plurality of highly doped source regions of the first conductivity type formed in said lightly doped base regions;
• invertible channel regions disposed between said source regions and said common conduction regions;
• deep implanted junctions of said second conductivity type formed in said epitaxial layer under said base regions extending between said first predetermined depth to a second predetermined depth;
• gate electrodes formed over said invertible channels, said gate electrodes being insulated from said invertible channels by an insulation layer;
• insulating spacers formed on the sides of said gate electrodes;
• and a layer of polysilicide disposed between said insulating spacers and said gate electrodes.