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US 6,639,274 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorNaoto Fujishima
Life of this patent
Estimating the term…
Abstract
A trench lateral MOSFET including a gate region where gate polysilicon is lead out to a substrate surface, and an active region where electric current is driven in a MOSFET operation, and with a trench width, in the gate region Wg, being narrower than a trench width in the active region Wt such that neither source polysilicon nor drain polysilicon is formed in a gate region within the trench. A planar layout of the MOSFET of the invention is a mesh pattern. The mesh pattern includes a trench-etched region in a mesh shape and a non-trench-etched region in an island or ribbed shape left in the trench-etched region. Alternatively, the mesh pattern includes a non-trench-etched region in a mesh shape and a trench-etched region in an island or ribbed shape formed in the non-trench-etched region.
Claims20
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a source region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a drain region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region, wherein
- the trench in an active region, where current is driven in a MOSFET operation, contains at least the gate insulating film, the first conductor, the interlayer dielectric, and the second conductor, and
- the trench in a gate region, where the first conductor is lead out to a surface of the semiconductor substrate, is filled with at least one material from a group consisting of the gate insulating film, the first conductor, the interlayer dielectric, and another interlayer dielectric.
7 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a drain region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a source region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region, wherein
- the trench in an active region, where current is driven in a MOSFET operation, contains at least the gate insulating film, the first conductor, the interlayer dielectric, and the second conductor, and
- the trench in a gate region, where the first conductor is lead out to a surface of the semiconductor substrate, is filled with at least one material from a group consisting of the gate insulating film, the first conductor, the interlayer dielectric, and another interlayer dielectric.
7 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a source region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a drain region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in a mesh shape, and a non-trench-etched region that is left un-etched is in an island shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a drain region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a source region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in a mesh shape, and a non-trench-etched region that is left un-etched is in an island shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a source region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a drain region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in a nearly mesh shape, and a non-trench-etched region that is left un-etched is in a ribbed shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a drain region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a source region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in a nearly mesh shape, and a non-trench-etched region that is left un-etched is in a ribbed shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a source region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a drain region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in an island shape, and a non-trench-etched region that is left un-etched is in a mesh shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a drain region;
- a second diffusion region formed on a surface region of the substrate outside the trench, the second diffusion region functioning as a source region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion regions
- wherein a trench-etched region that is etched by trench-etching is in an island shape, and a non-trench-etched region that is left un-etched is in a mesh shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a source region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a drain region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in a ribbed shape, and a non-trench-etched region that is left un-etched is in a nearly mesh shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a drain region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a source region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through interlayer dielectric and electrically connecting to the first diffusion region,
- wherein a trench-etched region that is etched by trench-etching is in a ribbed shape, and a non-trench-etched region that is left un-etched is in a nearly mesh shape.
6 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a source region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a drain region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region, wherein
- the trench in an active region, where current is driven in a MOSFET operation, contains at least the gate insulating film, the first conductor, the interlayer dielectric, and the second conductor, and
- the trench in a gate region, where the first conductor is lead out to a surface of the semiconductor substrate, is filled with a material comprising the gate insulating film, the first conductor, the interlayer dielectric, or another interlayer dielectric and excluding a second conductor.
7 more elements
A trench lateral MOSFET, comprising:
- a semiconductor substrate;
- a trench provided in the semiconductor substrate;
- a first diffusion region formed at a bottom of the trench, the first diffusion region functioning as a drain region;
- a second diffusion region formed on a surface region of the semiconductor substrate outside the trench, the second diffusion region functioning as a source region;
- a gate insulating film formed on a side wall region of the trench inside the trench;
- a first conductor formed inside the gate insulating film;
- and
- a second conductor formed inside the first conductor through an interlayer dielectric and electrically connecting to the first diffusion region, wherein
- the trench in an active region, where current is driven in a MOSFET operation, contains at least the gate insulating film, the first conductor, the interlayer dielectric, and the second conductor, and
- the trench in a gate region, where the first conductor is lead out to a surface of the semiconductor substrate, is filled with a material comprising the gate insulating film, the first conductor, the interlayer dielectric, or another interlayer dielectric and excluding a second conductor.
7 more elements
Dependencies are inferred from the claim text.