Back to results
US 6,639,272 B2Granted
Charge compensation semiconductor configuration
AssigneeInfineon Technologies AG
InventorsDirk Ahlers, Armin Willmeroth, Hans Weber
Life of this patent
Estimating the term…
Abstract
Charge balancing is achieved in a compensation component by creating compensation regions having different thickness. In this manner, the ripple of the electric field can be chosen to have approximately the same magnitude in all of the compensation regions.
Claims12
A compensation component, comprising:
- at least one first electrode;
- a second electrode configured remote from said at least one first electrode;
- a semiconductor body of a first conduction type;
- a region including at least one zone of a second conduction type that is opposite the first conduction type, said region configured in said semiconductor body and adjoining said first electrode;
- and
- a drift zone lying between said at least one zone of the second conduction type and said second electrode, said drift zone having compensation regions of the second conduction type, said compensation regions having different charge balances, said compensation regions configured near and below said at least one zone of the second conduction type, and at least some of said compensation regions having a layer thickness that is different from that of others of said compensation regions.
3 more elements
A compensation component, comprising:
- at least one first electrode;
- a second electrode configured remote from said at least one first electrode;
- a semiconductor body of a first conduction type;
- a region including at least one zone of a second conduction type that is opposite the first conduction type, said region configured in said semiconductor body and adjoining said first electrode;
- and
- a drift zone lying between said at least one zone of the second conduction type and said second electrode, said drift zone having compensation regions of the second conduction type, said compensation regions having different charge balances, said compensation regions configured laterally with respect to said at least one zone of the second conduction type, and at least some of said compensation regions having a width that is different from that of others of said compensation regions.
3 more elements
A method for fabricating a compensation component, which comprises:
- providing a compensation component that includes:
- at least one first electrode;
- a second electrode configured remote from said at least one first electrode;
- a semiconductor body of a first conduction type;
- a region including at least one zone of a second conduction type that is opposite the first conduction type, said region configured in said semiconductor body and adjoining said first electrode;
- and
- a drift zone lying between said at least one zone of the second conduction type and said second electrode, said drift zone having compensation regions of the second conduction type, said compensation regions having different charge balances, said compensation regions configured near and below said at least one zone of the second conduction type, and at least some of said compensation regions having a layer thickness that is different from that of others of said compensation regions;
- providing the semiconductor body as a semiconductor substrate;
- and
- performing masked implantations one after the other on the semiconductor substrate to produce the compensation regions in epitaxially deposited layers.
7 more elements
Dependencies are inferred from the claim text.