Semiconductor device with copper wiring connected to storage capacitor

A semiconductor device comprising:

• a silicon substrate;
• a storage capacitor formed on a main surface side of the silicon substrate and being provided with an upper electrode and a lower electrode arranged so as to put a capacitor insulation film between them;
• a wiring conductor formed on the main surface side of the silicon substrate and including copper (Cu) as the main element;
• and
• a barrier metal provided so as to contact with a surface of the wiring conductor, wherein
• the main element of a material configuring the barrier metal and the main element of a material configuring at least one of the upper electrode and the lower electrode is ruthenium.

A semiconductor device comprising:

• a semiconductor substrate;
• a storage capacitor formed on a main surface side of the semiconductor substrate and being provided with an upper electrode and a lower electrode arranged so as to put a capacitor insulation film between them;
• a wiring conductor formed on the main surface side of the semiconductor substrate and including copper (Cu) as the main element;
• and
• a barrier metal provided so as to contact with a surface of the wiring conductor, wherein
• the upper electrode extends over an area in which the opposing lower electrode exists;
• the main element of a material configuring the barrier metal and the main element of a material configuring the upper electrode is ruthenium;
• and
• the barrier metal contacts with the upper electrode in an upper electrode extending area out of the opposing lower electrode existing area.

A semiconductor device comprising:

• a semiconductor substrate;
• a storage capacitor formed on a main surface side of the semiconductor substrate and being provided with a first electrode and a second electrode arranged so as to put a capacitor insulation film between them;
• a wiring conductor formed on the main surface side of the semiconductor substrate and including copper (Cu);
• and
• a barrier metal provided so as to contact with a surface of the wiring conductor;
• wherein
• the shortest distance between the semiconductor substrate and the first electrode is shorter than the shortest distance between the semiconductor substrate and the second electrode;
• the second electrode extends over an area in which the opposing first electrode exists;
• the main element of a material configuring the barrier metal and the main element of a material configuring the second electrode is ruthenium;
• and
• the wiring conductor contacts with the second electrode in a second electrode extending area out of the opposing first electrode existing area.

A semiconductor device comprising:

• a semiconductor substrate;
• a storage capacitor formed on a main surface side of the semiconductor substrate, which comprises a first electrode, a second electrode, and a capacitor insulation film disposed therebetween;
• and
• a logic circuit formed on the main surface side of the semiconductor substrate, which comprises a wiring conductor and a transistor communicated with the wiring conductor, wherein
• said wiring conductor includes copper and comprises a first film disposed between the wiring conductor and an interlayer insulation film formed around the wiring conductor, and wherein
• the main element of the first film material and the main element of at least one of the first and the second electrode materials is ruthenium.

A semiconductor device comprising:

• a semiconductor substrate;
• a storage capacitor formed on a main surface side of the semiconductor substrate, which comprises a first electrode, a second electrode, and a capacitor insulation film disposed therebetween;
• and
• a logic circuit formed on the main surface side of the semiconductor substrate, which comprises a wiring conductor and a transistor communicated with the wiring conductor, wherein
• said wiring conductor includes copper as a main element and comprises a first film disposed between the wiring conductor and an interlayer insulation film formed around the wiring conductor, and wherein
• the main element of the first film material and the same main element as at least one of the first and the second electrode materials is ruthenium.

A semiconductor device comprising:

• a semiconductor substrate;
• a storage capacitor formed on a main surface side of the semiconductor substrate, which comprises an upper electrode, a lower electrode, and a capacitor insulation film disposed therebetween;
• and
• a logic circuit formed on the main surface side of the semiconductor substrate, which comprises a wiring conductor and a transistor communicated with the wiring conductor, wherein
• said wiring conductor includes copper as a main element and comprises a barrier metal disposed between the wiring conductor and an interlayer insulation film formed around the wiring conductor, and wherein
• said upper electrode is formed beyond an area in which said lower electrode exists, and the main element of the upper electrode and the main element of the barrier metal material is ruthenium.

A semiconductor device comprising:

• a silicon substrate;
• a storage capacitor formed on a main surface side of the silicon substrate and being provided with an upper electrode and a lower electrode arranged so as to put a capacitor insulation film between them;
• a wiring conductor formed on the main surface side of the silicon substrate and including copper (Cu) as the main element;
• and
• means, interposed between said upper electrode and said wiring conductor, for decreasing a contact resistance at a contact interface between the upper electrode and the wiring conductor wherein said means comprises a barrier metal layer interposed between the upper electrode and the wiring conductor, wherein the main element of said barrier metal layer and the main element of the upper electrode is ruthenium.

A semiconductor device comprising:

• a silicon substrate;
• a storage capacitor formed on a main surface side of the silicon substrate and being provided with an upper electrode and a lower electrode arranged so as to put a capacitor insulation film between them;
• a wiring conductor formed on the main surface side of the silicon substrate and including copper (Cu) as the main element;
• and
• means, interposed between said upper electrode and said wiring conductor, for increasing resistance to electromigration between the upper electrode and the wiring conductor, wherein said means comprises a barrier metal layer interposed between the upper electrode and the wiring conductor, wherein the main element of said barrier metal layer and the main element of the upper electrode is ruthenium.