Metal oxide integrated circuit on silicon germanium substrate
AssigneesSymetrix Corporation, Matsushita Electric Industrial Co., Ltd.
InventorsCarlos A. Paz de Araujo, Masamichi Azuma, Larry D. McMillan, Koji Arita
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Abstract
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.
Claims37
An integrated circuit comprising a silicon germanium substrate;
- a first electrode on said silicon germanium substrate, and a metal oxide adjacent said electrode;
- wherein said metal oxide comprises a layer having a thickness of less than 1000 nanometers and an average grain size smaller than 200 nanometers.
An integrated circuit comprising a silicon germanium substrate;
- a capacitor on said silicon germanium substrate, said capacitor comprising a bottom electrode, a top electrode and metal oxide between said electrodes;
- wherein said metal oxide comprises a layer of barium strontium titanate having a thickness of less than 1000 nanometers and an average grain size of 40 nanometers.
Dependencies are inferred from the claim text.