Group III nitride compound semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorsMasayoshi Koike, Shiro Yamasaki
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Abstract
Aluminum gallium nitride (AlxGa1−xN, 0<x<1) is employed as a substrate of a Group III nitride compound semiconductor device. In light-emitting diodes and laser diodes employing the substrate, crack generation is prevented, even when a thick cladding layer formed of aluminum gallium nitride (AlxGa1−xN, 0<x<1) is stacked on the substrate. The smaller the difference in Al compositional proportion between the substrate and an aluminum gallium nitride (AlxGa1−xN, 0<x<1) layer, the less likely the occurrence of crack generation.
Claims7
A Group III nitride compound semiconductor device comprising:
- a substrate made of aluminum gallium nitride satisfying the formula (AlxGa1−xN, 0<x<1),
- one or more Group III nitride compound semiconductor layers formed on a first surface of the substrate,
- a metal electrode formed on a second surface of said substrate, and
- a cladding layer comprising aluminum gallium nitride AlxGa1−xN (0<x<1).
A Group III nitride compound semiconductor device comprising:
- a substrate made of aluminum gallium nitride satisfying the formula (AlxGa1−xN, 0<x<1),
- one or more Group III nitride compound semiconductor layers formed on a first surface of the substrate,
- a metal electrode formed on a second surface of said substrate, and
- a first layer comprising AlxGa1−xN (0<x<1) stacked on the first surface of the substrate and having a thickness of 1-20 μm.
Dependencies are inferred from the claim text.