Structure and method for fabrication for a solid-state lighting device

A process for fabricating a structure for producing light, comprising:

• providing a first glass substrate;
• forming a first monocrystalline silicon layer on the first glass substrate;
• depositing a first monocrystalline perovskite oxide film overlying the first monocrystalline silicon layer, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
• forming a first amorphous oxide interface layer containing at least silicon and oxygen at an interface between the first monocrystalline perovskite oxide film and the first monocrystalline silicon layer;
• epitaxially forming a first monocrystalline compound semiconductor layer overlying the first monocrystalline perovskite oxide film;
• forming a first light-emitting semiconductor component for emitting light at a first wavelength, using the first monocrystalline compound semiconductor layer;
• providing a second glass substrate for overlying the first glass substrate;
• forming a second monocrystalline silicon layer on the second glass substrate;
• depositing a second monocrystalline perovskite oxide film overlying the second monocrystalline silicon layer, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
• forming a second amorphous oxide interface layer containing at least silicon and oxygen at an interface between the second monocrystalline perovskite oxide film and the second monocrystalline silicon layer;
• epitaxially forming a second monocrystalline compound semiconductor layer overlying the second monocrystalline perovskite oxide film;
• and
• forming a second light-emitting semiconductor component for emitting light at a second wavelength, using the second monocrystalline compound semiconductor layer.