US 6,639,245 B2 · Active matrix display device having high intensity and high precision and manufacturing method thereof

Abstract

An a-Si film 12 is formed on the whole surface of a quartz substrate 11, and a protection film 13 is formed in a region to be used as a display unit on the a-Si film 12. Subsequently, after a catalyst metal is selectively introduced into the whole surface of a region to be used as a peripheral drive circuit on the a-Si film 12, crystal growth is allowed by heating the a-Si film 12 to form a CG silicon film 14 and a p-Si film 15. Then, the catalyst metal in the CG silicon film 14 and the p-Si film 15 is removed by gettering. The concentration of the catalyst metal in the CG silicon film 14 is in the range of 1×1013 atoms/cm13 or higher and lower than 1×1015 atoms/cm3. The concentration of the catalyst metal in the p-Si film for a display unit 15 is made lower than the concentration of the catalyst metal in the CG silicon film 14b for a peripheral drive circuit. Thereby, a semiconductor device having a driver monolithic type liquid crystal display device with high intensity, high precision and uniform characteristics can be achieved.

Claims6

Dependent claims

A semiconductor device including a display unit having pixel electrodes arranged in a matrix and transistors for a pixel connected to the pixel electrodes and a peripheral drive circuit having a transistor for a peripheral drive circuit provided outside the display unit, wherein

the transistor for a peripheral drive circuit has a first crystalline silicon film, which is to be a crystal grown active region formed by introducing a catalyst metal into an amorphous silicon film and heating the film;
the transistor for a pixel has a second crystalline silicon film, which is to be an active region, formed by crystallizing the amorphous silicon film without introducing the catalyst metal;
the concentration of the catalyst metal in the first crystalline silicon film is in the range of 1×1013 atoms/cm3 or higher and lower than 1×1015 atoms/cm3;
and
the concentration of the catalyst metal in the second crystalline silicon film is lower than the concentration of the catalyst metal in the first crystalline silicon film.

2 more elements

Dependencies are inferred from the claim text.

Active matrix display device having high intensity and high precision and manufacturing method thereof

Life of this patent

Active matrix display device having high intensity and high precision and manufacturing method thereof

Life of this patent

Abstract

Claims6