Back to results
US 6,639,241 B2Granted
Optical device using semiconductor
AssigneeHitachi, Ltd.
InventorsKouji Nakahara, Tsurugi Sudo
Life of this patent
Estimating the term…
Abstract
In a ridge type semiconductor optical device in which both sides of the mesa stripe are recessed each into a rectangular shape by a depth reaching an active layer, a semiconductor optical device having a structure in which a structure that obstructs conductivity is disposed at a portion on the bottom of a rectangular shape. The structure that obstructs conductivity is attained, for example, by a structure in which impurities are ion implanted into a semiconductor.
Claims16
A semiconductor optical device comprising:
- a first cladding layer, a first guide layer, an active layer, a second guide layer and a ridge waveguide stripe comprising a second cladding layer extending in a light-waveguiding direction disposed successively on a semiconductor substrate;
- and
- a first and a second semiconductor ridge waveguide stripe protected layer, which are formed substantially at an identical height with the ridge waveguide stripe and spaced apart from the ridge waveguide stripe, and which are disposed on both sides of the ridge waveguide stripe,
- wherein a first and a second recessed region lower than the top of the ridge waveguide stripe are present between each of the first and the second semiconductor ridge waveguide stripe protected layer and the ridge waveguide stripe;
- and
- a first and a second region for obstructing the conductivity of the active layer is present in the same direction as the light-waveguiding direction of the ridge waveguide stripe in the first and the second recessed region respectively, and the shortest distance or the shortest gap between one end of the ridge waveguide stripe and one end of the second region is 2 μm or more and less than 10 μm.
3 more elements
The semiconductor optical device, comprising:
- a first cladding layer, a first guide layer, an active layer, a second guide layer and a ridge waveguide stripe comprising a second cladding layer extending in a light-waveguiding direction disposed successively on a semiconductor substrate;
- and
- a first and a second semiconductor ridge waveguide stripe protected layer, which are formed substantially at an identical height with the ridge waveguide stripe and spaced apart from the ridge waveguide stripe, and which are disposed on both sides of the ridge waveguide stripe,
- wherein a first and a second recessed region lower than the top of the ridge waveguide stripe are present between each of the first and second semiconductor ridge waveguide stripe protection layers and the ridge waveguide stripe;
- and
- a gap is disposed in the first and the second recessed region from the upper end to the lower end of the active layer in the same direction as the light-waveguiding direction of the ridge waveguide stripe, and the shortest distance or the shortest interval between one end of the ridge waveguide stripe and one end of the gap is 2 μm or more and less than 10 μm.
3 more elements
A semiconductor optical device, comprising:
- a first cladding layer, a first guide layer, an active layer, a second guide layer and a ridge waveguide stripe comprising a second-cladding layer extending in an optical waveguide direction disposed successively on a semiconductor substrate;
- and
- a first and a second semiconductor ridge waveguide stripe protection layer, which are formed substantially at an identical height with the ridge well guide stripe and spaced apart from the ridge waveguide stripe, and which are disposed on both sides of the ridge waveguide stripe,
- wherein a first and a second-region lower than the top of the ridge waveguide stripe are present between each of the first and second semiconductor ridge waveguide stripe protection layers and the ridge waveguide stripe;
- and
- wherein said semiconductor optical device further includes at least one of:
- (a) an ion implanted region for reducing the conductivity of the active layer is present in the first region in the direction identical with the light-waveguiding direction of the ridge waveguide stripe and the shortest distance or the shortest gap between one end of the ridge waveguide stripe and one end of the ion implanted region is 2 μm or more and less than 10 μm;
- (b) a first and a second region for obstructing the conductivity of the active layer is present in the same direction as the light-waveguiding direction of the ridge waveguide stripe in the first and the second recessed region respectively, and the shortest distance or the shortest gap between one end of the ridge waveguide stripe and one end of the second region is 2 μm or more and less than 10 μm;
- and
- (c) a gap is disposed in the first and the second recessed region from the upper end to the lower end of the active layer in the same direction as the light-waveguiding direction of the ridge waveguide stripe, and the shortest distance or the shortest interval between one end of the ridge waveguide stripe and one end of the.
7 more elements
Dependencies are inferred from the claim text.