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US 6,639,240 B2Granted
Photosemiconductor device and method for fabricating the same
AssigneeFujitsu Limited
InventorTomoyuki Akiyama
Life of this patent
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Abstract
A photosemiconductor device comprises a plurality fo quantum dots 22, and the plural quantum dots 22 have disuniform sizes. Quantum dots of disuniform sizes are formed by a low area ratio, whereby the photosemiconductor device can have a wide gain band.
Claims16
A photosemiconductor device comprising a plurality of quantum dots,
- the plurality of quantum dots having disuniform sizes,
- wherein the plural quantum dots are in three-dimensionally grown islands self-formed by S-K mode.
A method for fabricating a photosemiconductor device comprising the step of:
- forming a plurality of quantum dots of disuniform sizes on a semiconductor substrate, the plural quantum dots being self-formed in three-dimensionally grown island by S-K mode.
Dependencies are inferred from the claim text.