High-energy ion implanter for fabricating a semiconductor device

A high-energy ion implanter for fabricating a semiconductor device comprising:

• a low-energy accelerator for converting a polarity of ions flowed in from an ion source;
• a stripper for converting the ions accelerated from the low-energy accelerator to positive ions in vacuum conditions;
• a high-energy accelerator for accelerating, in high-energy, the positive ions that are converted in the stripper;
• a turbo pump for providing vacuum conditions in the stripper;
• a current sensor for detecting currents to check for abnormal operating conditions of the turbo pump;
• a central processing unit (CPU) that interrupts a circuit breaker to suspend the ion implanting process is response to the level of current detected by the current sensor;
• a motor connected to output terminals of the circuit breaker to generate a rotational driving force;
• a generator for generating a predetermined voltage for driving the turbo pump;
• and
• a power transmission unit for transmitting the rotational driving force of the motor to the generator.