Aluminum implantation method

In an ion implantation system having an ionization chamber, a source of aluminum ions, and an ionizing precursor gas, a method comprising acts of:

• producing a first concentration of at least one precursor ion from the precursor gas;
• and
• producing a second concentration of at least one aluminum ion by ionizing the source of aluminum ions with the first concentration of the at least one precursor ion,
• wherein an equivalent weight of the at least one aluminum ion and an equivalent weight of the at least one precursor ion differ by at least 2, and at a given extraction energy an aluminum ion current resulting from the second concentration is greater than a precursor ion current resulting from the first concentration.

An apparatus for implanting aluminum ions, the apparatus comprising:

• an ionization chamber;
• a source of aluminum ions;
• and
• an ionizing precursor gas,
• wherein the ionization chamber is capable of producing a first concentration of at least one precursor ion from the precursor gas and a second concentration of at least one aluminum ion by ionizing the source of aluminum ions with the first concentration of the at least one precursor ion, such that an equivalent weight of the at least one aluminum ion and an equivalent weight of the at least one precursor ion differ by at least 2, and at a given extraction energy an aluminum ion current resulting from the second concentration is greater than a precursor ion current resulting from the first concentration.