Gaseous ion source feed for oxygen ion implantation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorJaime M. Reyes
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Abstract
Methods and apparatus are provided for generating oxygen ions in an ion source having an arc chamber containing at least one oxidizable metal. The method includes the steps of feeding gaseous H2O into the arc chamber and operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.
Claims21
A method for generating oxygen ions in an ion source including an arc chamber containing at least one oxidizable metal, comprising the steps of:
- feeding gaseous H2O into the arc chamber;
- and
- operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.
An oxygen ion source comprising:
- an arc chamber containing a cathode;
- a source of gaseous H2O coupled to the arc chamber for introducing gaseous H2O into the arc chamber;
- and
- an energy source for producing a plasma in the arc chamber.
A method for generating oxygen ions in an ion source including an arc chamber containing at least one oxidizable metal, comprising the steps of:
- feeding gaseous H2O into the arc chamber;
- and
- ionizing the gaseous H2O to form oxygen ions.
Dependencies are inferred from the claim text.