Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
AssigneeNEC Corporation
InventorsKatsumi Maeda, Kaichiro Nakano
Life of this patent
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Abstract
Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]otane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.
Claims9
A photoresist comprising
- polymer comprising vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1)
- where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and
- photo-acid generator generating acid in the presence of light equal in wavelength to or less than 220 nanometers, the ratio of said photo-acid generator to said photoresist being fallen within the range from 0.2% by mass to 30% by mass.
A photoresist comprising
- polymer comprising vinyl polymer having a bridged alicylic δ lactone structure expressed by general formula (2)
- where each of R2 and R3 is selected from the group consisting of hydrogen and alkyl groups having the carbon number from 1 to 4, each of R4, R5 and R6 is selected from the group consisting of hydrogen atom and methyl group, R7 and R8 are hydrogen atoms or alkylene groups each having the carbon number from 1 to 10 and bonded for forming a ring and n is zero or 1, and
- photo-acid generator generating acid in the presence of light equal in wavelength to or less than 220 nanometers, the ratio of said photo-acid generator to said photoresist being fallen within the range from 0.2% by mass to 30% by mass.
Dependencies are inferred from the claim text.