Photoresist stripping solution and a method of stripping photoresists with the same

Abstract

A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions: (b) a water-soluble organic solvent; (c) a basic substance; and (d) water; and a method comprising etching a substrate using a photoresist pattern formed on the substrate as a mask, ashing the photoresist pattern, stripping the ashed photoresist pattern using the photoresist stripping solution as described above, and then rinsing the substrate with water. Thus, there are disclosed a photoresist stripping solution which is excellent not only in stripping away post-ashing residue (modified photoresist films) and post-etching residue (metal deposition) but also in protecting substrates from corrosion in the step of rinsing with water; and a method for stripping photoresists using the same.

Dependencies are inferred from the claim text.