Film planarization for low-k polymers used in semiconductor structures
AssigneeInternational Business Machines Corporation
InventorsDarryl D. Restaino, Jeffrey C. Hedrick, John A. Fitzsimmons, Christy S. Tyberg, Chih-Chien Liu, Shahab Siddiqui
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Abstract
A method for forming a planarized dielectric layer upon a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer. A dielectric material is applied in a spin-on fashion upon the adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of less than 30 seconds. Then, the dielectric material is dried by baking without additional spinning of the semiconductor wafer.
Claims18
A method for forming a planarized dielectric layer upon a semiconductor wafer, the method comprising:
- applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer;
- applying a dielectric material in a spin-on fashion upon said adhesion promoter layer at a relative humidity of less tan 40% and for a thickness setting duration of about 12 to about 16 seconds;
- and
- drying said dielectric material by baking thereof without additional spinning of the semiconductor wafer.
A planarized dielectric layer for a semiconductor wafer, the dielectric layer comprising:
- an adhesion promoter layer applied to the wafer;
- and
- a dielectric material, applied in a spin-on fashion upon said adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of about 12 to about 16 seconds;
- wherein said dielectric material is dried by baking thereof without additional spinning of the semiconductor wafer.
Dependencies are inferred from the claim text.