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US 6,638,877 B2Granted
Ultra-thin SiO2using N2O as the oxidant
AssigneeTexas Instruments Incorporated
InventorAntonio L. P. Rotondaro
Life of this patent
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Abstract
N2O is used as the oxidant for forming an ultra-thin oxide (14). The low oxidation efficiency of N2O compared to O2 allows the oxidation temperature to be raised to greater than 850° C. while maintaining the growth rate. A cold wall lamp heater rapid thermal process (RTP) tool limits reaction to the surface of the wafer (10). Hydrogen is preferably added to improve the electrical properties of the oxide (14).
Claims13
A method for fabricating an integrated circuit, comprising the steps of:
- growing an oxide layer over a semiconductor body using N2O with hydrogen added at a given concentration to improve the electrical properties of the oxide layer.
A method of fabricating an integrated circuit comprising the step of:
- growing an oxide layer using N2O as the oxidant in a cold wall rapid thermal process tool, with a hydrogen concentration of 1% or less.
Dependencies are inferred from the claim text.