Process for manufacturing reflective TFT-LCD with rough diffuser

A method of forming a TFT-LCD device with a rough pixel electrode, the method comprises the following steps of:

• forming a first metal layer on a substrate;
• performing a first etching procedure to etch the first metal layer for defining a gate structure;
• forming a first insulating layer on the gate structure and the substrate;
• forming a semiconductor layer on the first insulating layer above the gate structure;
• forming a second insulating layer on the semiconductor layer and the first insulating layer;
• performing a second etching procedure to etch the second insulating layer to define an etching stopper above the gate structure;
• forming a second metal layer on the etching stopper, the semiconductor layer, and the first insulating layer;
• performing a third etching procedure to etch the second metal layer to define drain/source structures aside the etching stopper;
• forming a passivation layer on the drain/source structures and the first insulating layer, wherein a portion of the drain/source structures is exposed;
• forming a pixel electrode on the passivation layer to electrically connect the drain/source structures;
• wherein at least one sort of bumps are defined above the substrate to make the passivation layer and the pixel electrode duplicate rising and falling shapes of the bumps, wherein the bumps comprise first bumps made of the first metal layer defined in the first etching procedure simultaneously, second bumps made of the second insulating layer defined in the second etching procedure simultaneously, and third bumps made of the second metal layer defined in the third etching procedure simultaneously.

A method of forming a TFT-LCD device with a rough pixel electrode for serving as a diffuser, the method comprises the following steps of:

• forming a first metal layer on a substrate;
• performing a first etching procedure to etch the first metal layer for defining a gate structure and first bumps on the substrate;
• forming a first insulating layer on the substrate to cover the gate structure and the first bumps;
• forming a semiconductor layer on the first insulating layer above the gate structure;
• forming a second insulating layer on the semiconductor layer and the first insulating layer;
• performing a second etching procedure to etch the second insulating layer to define an etching stopper above the gate structure;
• forming a second metal layer on the etching stopper, the semiconductor layer and the first insulating layer;
• performing a third etching procedure to etch the second metal layer to define drain/source structures aside the etching stopper;
• forming a passivation layer on the drain/source structures and the first insulating layer, wherein a portion of the drain/source structures is exposed;
• and
• forming a pixel electrode on the passivation layer to electrically connect the source structure, wherein the passivation layer and the pixel electrode with rough surface shapes duplicated from that of the first bumps.