Method for preventing or reducing anodic Cu corrosion during CMP

A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process comprising the steps of:

• providing at least one semiconductor wafer polishing surface including copper filled features;
• polishing the at least one semiconductor wafer polishing surface according to a CMP process having a polishing pad surface contacting the at least one semiconductor wafer polishing surface at least a portion of the polishing pad in electrically conductive communication with a conductive polishing platen;
• and,
• providing at least one electrically conductive pathway comprising an electrical contact member for maintaining continuous contact with a portion of the conductive polishing platen to maintain continuous electrical communication from the semiconductor wafer polishing surface to ground potential during the CMP process to reduce an electrical charge at the at least one semiconductor wafer polishing surface.