Radical-assisted sequential CVD
AssigneeGenus, Inc.
InventorOfer Sneh
Life of this patent
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Abstract
A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Claims3
A method of depositing metal on a substrate in a deposition chamber, comprising the steps of:
- (a) preparing a surface of the substrate for chemical reactivity with a first precursor;
- (b) depositing a first layer of metal by flowing a first precursor bearing the metal over the surface of the substrate;
- (c) depositing one or more subsequent layers of metal on top of said first layer to build a metal film by repeatedly (i) flowing one or more radicalized species over the surface of the metal layer upon which said one or more subsequent layers of metal is to be deposited to render the surface of the metal layer chemically reactive to one or more precursors;
- and (ii) then flowing over the surface of the metal layer a precursor which is chemically reactive to the surface of the metal layer.
Dependencies are inferred from the claim text.