Method of filling contact hole of semiconductor device

A method of filling a contact hole of a semiconductor device, comprising the steps of:

• forming the contact hole by dry etching;
• first dry cleaning said contact hole by passing plasma excited from a source gas over an exposed underlying material layer to remove a damaged layer formed from the dry etching, the first dry cleaning being performed using one of an ICP process and an RIE process, wherein the source gas includes oxygen, trifluoronitrogen, and helium if the first dry cleaning is performed using an ICP process and said source gas includes CF4, O2, Ar if the first dry cleaning is performed using an RIE;
• second dry cleaning to remove a spontaneous oxide layer resulting from the first dry cleaning, wherein the second dry cleaning process includes passing trifluoronitrogen and/or hydrogen plasma over the exposed underlying material layer;
• and
• and forming an electrically conductive layer in said contact hole.

A method for filling a contact hole of a semiconductor device comprising the steps of:

• forming a dielectric layer on an underlying material layer;
• patterning the dielectric layer by dry etching to form a contact hole exposing underlying material layer;
• first dry cleaning for providing plasma excited from a source gas to the exposed underlying material layer to remove a damaged layer resulting from the formation of the contact hole, the first dry cleaning being performed using one of an ICP process and an RIE process, wherein the source gas includes NF3, O2, and He if the first dry cleaning is performed using an ICP process and said source gas includes CF4, O2, Ar if the first dry cleaning is performed using an RIE;
• second dry cleaning to remove a spontaneous oxide layer resulting from the first dry cleaning, wherein the second dry cleaning process includes passing trifluoronitrogen and/or hydrogen plasma over the exposed underlying material layer;
• and
• forming an electrically conductive layer with which to fill the contact hole, wherein the formation of the electrically conductive layer is performed in a separate chamber clustered by being connected sequentially to a chamber for performing the second dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.