Method of reducing substrate coupling/noise for radio frequency CMOS (RFCMOS) components in semiconductor technology by backside trench and fill

A method of reducing substrate coupling and noise for one or more radio frequency complimentary metal-oxide semiconductor (RFCMOS) components, comprising the steps of:

• providing a substrate having a frontside and a backside;
• wherein the substrate is a P-type substrate or an N-type substrate;
• forming one or more RFCMOS components over the substrate;
• forming one or more isolation structures within the substrate proximate the one or more (RFCMOS) components;
• etching the backside of the substrate to form respective trenches within the substrate and over at least the one or more isolation structures;
• and
• filling the respective trenches with dielectric material whereby the substrate coupling and noise for the one or more RFCMOS components are reduced.

A method of reducing substrate coupling and noise for one or more radio frequency complimentary metal-oxide semiconductor (RFCMOS) components, comprising the steps of:

• providing a substrate having a frontside and a backside;
• wherein the substrate is a P-type wafer or an N-type wafer that is comprised of a material selected from the group consisting of silicon and germanium;
• forming one or more RFCMOS components over the substrate;
• forming one or more isolation structures within the substrate proximate the one or more (RFCMOS) components;
• etching the backside of the substrate to form respective trenches within the substrate and over at least the one or more isolation structures;
• and
• filling the respective trenches with dielectric material whereby the substrate coupling and noise for the one or more RFCMOS components are reduced.