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US 6,638,835 B2Granted
Method for bonding and debonding films using a high-temperature polymer
AssigneeIntel Corporation
InventorsBrian Roberds, Cindy Colinge, Brian Doyle
Life of this patent
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Abstract
The invention relates to a semiconductor structure that is formed by delaminating a semiconductor substrate and by bonding the top section of the substrate to a transfer substrate. Delaminating is carried out by causing a polymer film to achieve greater adhesion that an embrittlement layer in the semiconductor substrate.
Claims16
A process comprising:
- forming a stiffener upon a first substrate, wherein the first substrate includes a top section and a bottom section, wherein the stiffener is disposed against the top section;
- containing the stiffener with a polymer film that is disposed upon a second substrate;
- delaminating the bottom section;
- contacting the top section with a third substrate;
- and
- delaminating the second substrate.
3 more elements
A process comprising:
- forming a stiffener upon a first substrate, wherein the first substrate includes a top section and a bottom section, wherein the stiffener is disposed against the top section;
- containing the stiffener with a polymer film that is disposed upon a second substrate;
- delaminating the bottom section;
- contacting the top section with a third substrate;
- and
- delaminating the second substrate, wherein delaminating the second substrate includes attenuating the polymer film, selected from back-side access through the second substrate and lateral access between the second substrate and the third substrate, and the combination thereof.
3 more elements
A process comprising:
- forming a stiffener upon a first substrate, wherein the first substrate includes a top section and a bottom section. wherein the stiffener is disposed against the top section;
- containing the stiffener with a polymer film that is disposed upon a second substrate;
- delaminating the bottom section wherein delaminating the bottom section exposes a fracture surface, further including:
- forming a first dielectric layer upon the fracture surface;
- contacting the fracture surface with a dielectric layer on a third substrate;
- and
- delaminating the second substrate.
4 more elements
A process comprising:
- forming a stiffener upon a first substrate, wherein the first substrate includes a top section and a bottom section, wherein the stiffener is disposed against the top section;
- containing the stiffener with a polymer film that is disposed upon a second substrate;
- delaminating the bottom section wherein delaminating the bottom section exposes a fracture surface, further including:
- forming a first dielectric layer upon the fracture surface;
- contacting the top section underside with a dielectric layer on a third substrate;
- and
- delaminating the second substrate, wherein delaminating the second substrate includes attenuating the polymer film, selected from back-side access through the second substrate and lateral access between the second substrate and the third substrate, and the combination thereof.
4 more elements
A process of forming a bonded epitaxial film device comprising:
- forming an active device upon a top section of a first substrate;
- forming a stiffener upon the top section of the first substrate, wherein the first substrate includes a bottom section;
- contacting the stiffener with a polymer film that is disposed upon a second substrate;
- delaminating the bottom section from the top section along a fracture surface;
- forming a first dielectric layer upon the fracture surface;
- contacting the first dielectric layer with a dielectric layer on a third substrate;
- and
- delaminating the second substrate.
5 more elements
A process comprising:
- providing a first wafer including a top section and a bottom section and a stiffener disposed against the top section;
- providing an intermediate substrate including a first side and a second side and a polymer film disposed on the first side;
- applying the polymer film to the stiffener;
- treating the polymer film under conditions that cause the polymer to reflow against the stiffener and to outgas;
- delaminating the bottom section;
- and
- debonding the polymer from the stiffener by a process selected from lateral isotropic etching and wet isotropic etching through back-side access through the intermediate substrate.
4 more elements
A process comprising:
- providing a first wafer including a top section and a bottom section and a stiffener disposed against the top section;
- providing an intermediate substrate including a first side and a second side and a polymer film disposed on the first side;
- applying the polymer film to the stiffener;
- treating the polymer film under conditions that cause the polymer to reflow against the stiffener and to outgas;
- delaminating the bottom section;
- and
- debonding the polymer from the stiffener by a process selected from lateral isotropic etching and isotropic etching through back-side access through the intermediate substrate, wherein the etching is selected from a wet etch and a dry etch, and wherein the etch chemistry is selected from a wet eth and an oxygen plasma etch.
4 more elements
Dependencies are inferred from the claim text.