Process for the fabrication of integrated devices with reduction of damage from plasma
AssigneeSTMicroelectronics S.r.l.
InventorsOmar Vassalli, Simone Alba
Life of this patent
Estimating the term…
Abstract
The process for the fabrication of an electronic device has the steps of forming a layer to be etched on top of a substrate in a wafer of semiconductor material; depositing a masking layer; and carrying out a plasma etch to define the geometry of the layer to be etched. The masking layer is made so as to be conductive, at least during one part of the etching step; in this way, the electrons implanted on the top part of the masking layer during plasma etching can recombine with the positive charges which have reached the layer to be etched. The recombination of the charges makes it possible to prevent damage from plasma resulting from the formation of parasitic electric currents which are detrimental to the electronic device itself.
Claims40
A Process for the fabrication of an electronic device, comprising the steps of:
- forming a body of semiconductor material which includes a region to be etched;
- producing a masking structure which has a geometry;
- carrying out a plasma etch to define the region to be etched according to the geometry of said masking structure;
- and
- producing a conductive path prior to carrying out said plasma etching step for electric charges which are present on said masking structure during said plasma etching step.
A method comprising:
- forming a layer of semiconductor material, which includes a region to be etched;
- overlaying on top of the body of the semiconductor material a masking structure;
- carrying out a plasma etch of a portion of the semiconductor material which is overlayed by the masking structure;
- rendering the masking structure as conductive;
- and
- continuing to carry out a plasma etch of the body semiconductor material to obtain a region corresponding to the region to be etched.
A process for the fabrication of an electronic device comprising the steps of:
- forming a body of semiconductor material which includes a region to be etched;
- forming a masking structure overlying said body semiconductor material, the masking structure having a geometry and being comprised of non-conductive material;
- producing a masking structure composed of photosensitive organic polymers;
- producing a conductive path for electric charges which are present on the masking structure during a plasma etching, said conductive path being created by treating the masking structure so as to render it conductive by graphitizing the masking structure and introducing a conductive species into the masking structure;
- and
- carrying out a plasma etch to define the region to be etched, according to the geometry of said masking structure.
A process for the fabrication of an electronic device, comprising the steps of:
- forming a body of semiconductor material which includes a region to be etched;
- forming a masking structure overlying said body of semiconductor material, the masking structure having a geometry corresponding to the geometry to be etched;
- depositing a layer of conductive material on top of said masking structure so as to provide a conductive path for electric charges which may be present on the masking structure during a plasma etching step;
- and
- carrying out a plasma etch to define the region to be etched according to the geometry of said masking structure.
A method comprising:
- forming a layer of semiconductor material, which includes a region to be etched;
- overlying on top of the layer of semiconductor material a non-conductive masking structure composed of a photosensitive organic polymer;
- rendering the masking structure conductive by implanting the masking structure with a dopant;
- carrying out a plasma etch of the body of semiconductor material using the masking structure as a mask to define the regions to be etched.
Dependencies are inferred from the claim text.