Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices

A method of forming a chalcogenide comprising device, comprising:

• providing conductive electrode material over chalcogenide material having metal ions diffused therein;
• forming a conductive actinic energy blocking material layer on the conductive electrode material to a thickness of no greater than 500 Angstroms, the conductive actinic energy blocking material layer being effective to shield actinic energy from reaching an interface of the conductive electrode material and the actinic energy blocking material layer to substantially preclude diffusion of the conductive electrode material into the chalcogenide material upon exposure to said actinic energy;
• patterning the conductive electrode material and the conductive actinic energy blocking material layer into a first electrode;
• forming a dielectric layer on the first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal ions diffused therein.

A method of forming a chalcogenide comprising device, comprising:

• providing conductive electrode material over chalcogenide material having metal ions diffused therein;
• forming an insulative actinic energy blocking material layer on the conductive electrode material to a thickness of no greater than 500 Angstroms, the insulative actinic energy blocking material layer being effective to shield actinic energy from reaching an interface of the conductive electrode material and the actinic energy blocking material layer to substantially preclude diffusion of the conductive electrode material into the chalcogenide material upon exposure to said actinic energy;
• patterning the conductive electrode material with the insulative actinic energy blocking material layer received thereover into a first electrode;
• forming a dielectric layer on the insulative actinic energy blocking material layer received over the first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal ions diffused therein.

A method of forming a chalcogenide comprising device, comprising:

• forming a chalcogenide material over a substrate;
• forming a layer of a metal over the chalcogenide material;
• irradiating the metal layer so as to break a chalcogenide bond of the chalcogenide material at an interface of the metal layer and chalcogenide material and diffuse at least some of the metal into the chalcogenide material;
• after the irradiating, forming conductive electrode material over the chalcogenide material having the metal diffused therein and any remaining portion of the metal layer;
• forming an actinic energy blocking material layer on the conductive electrode material, the actinic energy blocking material layer being effective to shield actinic energy from reaching the interface of the metal layer and chalcogenide material to substantially preclude any further diffusion of the metal into the chalcogenide material upon exposure to said actinic energy;
• forming the conductive electrode material and any remaining portion of the metal layer into a first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal diffused therein.

A method of forming a chalcogenide comprising device, comprising:

• providing conductive electrode material over chalcogenide material having metal ions diffused therein;
• forming an actinic energy blocking material layer on the conductive electrode material, the actinic energy blocking material layer being effective to shield actinic energy from reaching an interface of the conductive electrode material and the actinic energy blocking material;
• forming the conductive electrode material into a first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal diffused therein.

A method of forming a chalcogenide comprising device, comprising:

• providing conductive electrode material over chalcogenide material having metal ions diffused therein;
• forming a conductive actinic energy blocking material layer on the conductive electrode material to a thickness of no greater than 500 Angstroms, the conductive actinic energy blocking material layer being effective to shield actinic energy from reaching an interface of the conductive electrode material and the actinic energy blocking material layer;
• patterning the conductive electrode material and the conductive actinic energy blocking material layer into a first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal ions diffused therein.

A method of forming a chalcogenide comprising device, comprising:

• providing conductive electrode material over chalcogenide material having metal ions diffused therein;
• forming an insulative actinic energy blocking material layer on the conductive electrode material to a thickness of no greater than 500 Angstroms, the insulative actinic energy blocking material layer being effective to shield actinic energy from reaching an interface of the conductive electrode material and the actinic energy blocking material layer;
• patterning the conductive electrode material with the insulative actinic energy blocking material layer received thereover into a first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal ions diffused therein.

A method of forming a chalcogenide comprising device, comprising:

• forming a chalcogenide material over a substrate;
• forming a metal over the chalcogenide material;
• irradiating the metal effective to break a chalcogenide bond of the chalcogenide material at an interface of the metal and chalcogenide material and diffuse at least some of the metal into the chalcogenide material;
• after the irradiating, forming conductive electrode material over the chalcogenide material having the metal diffused therein;
• forming an actinic energy blocking material layer on the conductive electrode material, the actinic energy blocking material layer being effective to shield actinic energy from reaching the interface;
• forming the conductive electrode material into a first electrode;
• and
• providing a second electrode proximate the chalcogenide material having the metal diffused therein.