Method for producing an insulation
AssigneeInfineon Technologies AG
InventorsAlbrecht Kieslich, Klaus Feldner, Herbert Benzinger
Life of this patent
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Abstract
A method for producing a semiconductor device having a first region with storage capacitors and a second region with at least one well surrounded by an insulation. The method creates both the storage capacitors and the insulation by forming trenches in the first region and at least one trench in the second region, and the trenches have a depth of at least 2 μm. The trenches in the first region are treated to provide first and second electrodes separated by a dielectric to form the capacitors and each trench in the second region provides an insulation which surrounds any wells in the second region.
Claims16
A method for the simultaneous production of storage capacitors and at least one well insulation in a semiconductor substrate, said method comprising the steps of providing a semiconductor substrate having at least one first region for the acceptance of storage capacitors and at least one second region for the acceptance of insulation;
- etching to simultaneously form a plurality of trenches in the first region and at least one trench in the second region, each trench in the first and second regions having a depth of more than 2 μm;
- creating a first electrode on walls of the trenches in at least the first region utilizing a doping technique;
- forming a dielectric in the trenches at least in the first region using a film technique;
- creating a second electrode in the trenches at least in the first region using a film technique, so that storage capacitors are formed in the first region;
- and creating at least one well region in the second region utilizing a well implantation, said well region being laterally limited by the at least one trench of the second region.
A method for the simultaneous production of storage capacitors and at least one well insulation in a semiconductor substrate, said method comprising the steps of providing a semiconductor substrate having at least one first region for the acceptance of storage capacitors and at least one second region for the acceptance insulation;
- etching a plurality of trenches in the first region and at least one trench in the second region, each trench in the first and second regions having a depth of more than 2 μm;
- creating a first electrode on walls of the trenches in only the first region utilizing a doping technique including providing a doping layer on the walls of the trench, removing the doping layer from each trench in the second region and then diffusing the doping material into the wall of the trench;
- forming a dielectric in the trenches at least in the first region using a film technique;
- creating a second electrode in the trenches at least in the first region using a film technique, so that storage capacitors are formed in the first region;
- and creating at least one well region in the second region utilizing a well implantation.
A semiconductor component having a semiconductor substrate having a first region for the acceptance of storage capacitors and a second region for the acceptance of insulation, a plurality of trenches in the first region and at least one trench in the second region, each of the trenches having a depth greater than 2 μm;
- a storage capacitor in each trench of the first region, each capacitor being formed by first electrodes being present on walls of each trench in the first region and a second electrode in each trench in the first region being separated from the first electrodes by dielectric films, at least one well implantation being present in the second region, said well implantation being surrounded by the at least one trench in the second region to isolate the well implantation from any transistors in the first region.
Dependencies are inferred from the claim text.