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US 6,638,802 B1Granted
Forming strained source drain junction field effect transistors
AssigneeIntel Corporation
InventorsJack Hwang, Craig Andyke, Mitchell Taylor
Life of this patent
Estimating the term…
Abstract
By providing a high dose germanium implant and then forming a P-type source/drain extension, a strained source/drain junction may be formed. The strained source/drain junction may be shallower and have lower resistivity in some embodiments.
Claims18
A method comprising:
- implanting germanium at a dose greater than about 2E16 atoms/cm2;
- and
- forming a P-type source/drain extension in the region that has been implanted with germanium.
A method comprising:
- implanting germanium;
- and
- doping the region that has been implanted germanium with a P-type dopant to form a source/drain extension having a higher concentration of germanium ions than P-type ions.
A method comprising:
- forming a gate structure;
- implanting germanium at a dose greater than about 2E16 atoms/cm2 with said gate structure in place;
- and
- forming a P-type source/drain extension in the region that has been implanted with germanium.
1 more element
Dependencies are inferred from the claim text.