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US 6,638,800 B1Granted
Laser processing apparatus and laser processing process
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroaki Ishihara, Kazuhisa Nakashita, Hideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
Life of this patent
Estimating the term…
Abstract
A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
Claims19
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a pulsed laser beam to crystallize said semiconductor layer;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam is a harmonic of a laser comprising Nd with a pulse duration 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a pulsed laser beam to crystallize said semiconductor layer;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam is a fourth harmonic of a laser comprising Nd with a wavelength of 265 nm with a pulse duration 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer doped with an impurity selected from the group consisting of phosphorus, boron and arsenic on an insulating surface;
- irradiating said semiconductor layer with a pulsed laser beam;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam is a harmonic of a laser comprising Nd with a pulse duration 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer doped with an impurity selected from the group consisting of phosphorus, boron and arsenic on an insulating surface;
- irradiating said semiconductor layer with a pulsed laser beam;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam is a fourth harmonic of a laser comprising Nd with a wavelength of 265 nm with a pulse duration 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- selectively introducing ions of an impurity into said semiconductor layer to form impurity doped regions in said semiconductor layer;
- irradiating said semiconductor layer with a pulsed laser beam to anneal said impurity doped regions;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam is a harmonic of a laser comprising Nd with a pulse duration 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- selectively introducing ions of an impurity into said semiconductor layer to form impurity doped regions in said semiconductor layer;
- irradiating said semiconductor layer with a pulsed laser beam to anneal said impurity doped regions;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam is a fourth harmonic of a laser comprising Nd with a wavelength of 265 nm with a pulse duration 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a laser beam to crystallize said semiconductor layer wherein a cross section of said laser beam perpendicular to a propagation direction of said laser beam at said semiconductor layer is elongated in one direction;
- moving a relative position of said semiconductor layer with respect to said laser beam in a direction orthogonal to an elongation direction of said cross section;
- wherein said laser beam is a harmonic of a laser comprising Nd;
- and
- wherein the laser beam is a pulsed laser and a pulse duration of said laser beam is 50 nsec or longer.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a pulsed laser beam to crystallize said semiconductor layer wherein a cross section of said laser beam at said semiconductor layer is elongated in one direction;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam in a direction orthogonal to an elongation direction of said cross section,
- wherein said laser beam has a wavelength not longer than 400 nm, a pulsed duration of 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer doped with an impurity selected from the group consisting of phosphorus, boron and arsenic on an insulating surface;
- irradiating said semiconductor layer with a laser beam wherein a cross section of said laser beam at said semiconductor layer is elongated in one direction;
- moving a relative position of said semiconductor layer with respect to said laser beam in a direction orthogonal to an elongation direction of said cross section;
- wherein said laser beam is a harmonic of a laser comprising Nd;
- and
- wherein the laser beam is a pulsed laser and a pulse duration of said laser beam is 50 nsec or longer.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer doped with an impurity selected from the group consisting of phosphorus, boron and arsenic on an insulating surface;
- irradiating said semiconductor layer with a laser beam wherein a cross section of said laser beam at said semiconductor layer is elongated in one direction;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam in a direction orthogonal to an elongation direction of said cross section,
- wherein said laser beam has a wavelength not longer than 400 nm, a pulse duration of 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- selectively introducing ions of an impurity into said semiconductor layer to form impurity doped regions in said semiconductor layer;
- irradiating said semiconductor layer with a pulsed laser beam to anneal said impurity doped regions wherein a cross section of said laser beam at said semiconductor layer is elongated in one direction;
- moving a relative position of said semiconductor layer with respect to said laser beam in a direction orthogonal to an elongation direction of said cross section;
- wherein said laser beam is a harmonic of a laser comprising Nd;
- and
- wherein the laser beam is a pulsed laser and a pulse duration of said laser beam is 50 nsec or longer.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- selectively introducing ions of an impurity into said semiconductor layer to form impurity doped regions in said semiconductor layer;
- irradiating said semiconductor layer with a pulsed laser beam to anneal said impurity doped regions wherein a cross section of said laser beam at said semiconductor layer is elongated in one direction;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam in a direction orthogonal to an elongation direction of said cross section,
- wherein said laser beam has a wavelength not longer than 400 nm, a pulse duration of 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a pulsed laser beam to crystallize said semiconductor layer;
- and
- moving a relative position of said semiconductor layer with respect to said laser beam while irradiating said pulsed laser beam,
- wherein said laser beam has a wavelength not longer than 400 nm, a pulse duration of 50 nsec or longer, and a number of pulses of the laser beam which is irradiated on one portion of the semiconductor layer is 5 or more.
2 more elements
Dependencies are inferred from the claim text.