High performance poly-SiGe thin film transistor and a method of fabricating such a thin film transistor
AssigneesSony Corporation, Massachusetts Institute of Technology
InventorsTakashi Noguchi, Rafael Reif, Julie Tsai, Andrew J. Tang
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Abstract
The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1-xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1-xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
Claims13
A method of fabricating a one-gate thin film transistor, having an active region and a gate, wherein said active region comprises a poly-Si1-xGex alloy material and channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1-xGex alloy material and the gate comprising the steps of:
- depositing a gate,
- depositing an active region comprising a poly-Si1-xGex alloy material layer and a channel layer of silicon, to form a composite, and
- treating the composite with at least one method selected from the group consisting of crystallization and excimer laser annealing,
- wherein said depositing a gate occurs prior to said depositing an active region and said treating the composite, wherein x ranges from 0.05 to 0.4 atomic %.
Dependencies are inferred from the claim text.