Manufacturing method for two-dimensional image detectors and two-dimensional image detectors

Abstract

A TFT array is formed on a glass substrate (step P1) A surface protection layer is formed on the glass substrate so as to cover the TFT a-ray (step P2). The glass substrate is divided to form active matrix substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.

Dependencies are inferred from the claim text.